cat93c86late13 Catalyst Semiconductor, cat93c86late13 Datasheet - Page 2

• Manufacturer Part Number: cat93c86late13
• Description: 16k-bit Microwire Serial Eeprom
• Manufacturer: Catalyst Semiconductor

ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias .................. -55°C to +125°C
Storage Temperature ........................ -65°C to +150°C
Voltage on any Pin with
V
Package Power Dissipation
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
RELIABILITY CHARACTERISTICS
D.C. OPERATING CHARACTERISTICS
V
Doc. No. 1091, Rev. O
CAT93C86
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V
CC
CC
Symbol
Symbol
I
N
V
LTH
T
Respect to Ground
Capability (T
V
V
V
V
voltage on output pins is V
END
I
I
V
V
ZAP
I
V
V
I
with Respect to Ground ................ -2.0V to +7.0V
DR
I
CC1
CC2
SB1
SB2
I
OH1
OH2
= +1.8V to +5.5V, unless otherwise specified.
LO
OL1
OL2
IH1
IH2
LI
IL1
IL2
(3)(4)
(3)
(3)
(3)
ESD Susceptibility
Output Leakage Current
Input Leakage Current
Power Supply Current
Power Supply Current
Power Supply Current
Power Supply Current
Data Retention
(Standby) (x16Mode)
(Standby) (x8 Mode)
Output High Voltage
Output High Voltage
A
(Including ORG pin)
Output Low Voltage
Output Low Voltage
Input High Voltage
Input High Voltage
Input Low Voltage
Input Low Voltage
Parameter
Endurance
= 25°C) ................................... 1.0W
Latch-Up
Parameter
(Write)
(Read)
(1)
............. -2.0V to +V
CC
+0.5V, which may overshoot to V
(2)
........................ 100 mA
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
Reference Test Method
JEDEC Standard 17
ORG=Float or V
CC
V
4.5V ≤ V
4.5V ≤ V
1.8V ≤ V
1.8V ≤ V
4.5V ≤ V
4.5V ≤ V
1.8V ≤ V
1.8V ≤ V
Test Conditions
V
OUT
I
I
IN
I
+2.0V
OH
OH
ORG=GND
f
V
f
V
OL
SK
SK
I
OL
CS = 0V
CS = 0V
CC
CC
= 0V to V
CS=0V
= 0V to V
= -400µA
= -100µA
= 2.1mA
= 1MHz
= 1MHz
= 1mA
= 5.0V
= 5.0V
CC
CC
CC
CC
CC
CC
CC
CC
CC
< 5.5V
< 5.5V
< 4.5V
< 4.5V
< 5.5V
< 5.5V
< 4.5V
< 4.5V
2
+2.0V for periods of less than 20 ns.
CC
CC
CC
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
,
V
1,000,000
V
CC
CC
2000
Min
-0.1
2.4
Min
100
100
2
0
x 0.7
- 0.2
CC
Typ
Typ
0
+1V.
V
V
V
CC
CC
Max
Max
500
CC
0.8
0.4
0.2
10
10
3
1
1
x 0.2
+ 1
+1
Cycles/Byte
Years
Units
Units
Volts
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V