tc7sz00afe TOSHIBA Semiconductor CORPORATION, tc7sz00afe Datasheet - Page 3

• Manufacturer Part Number: tc7sz00afe
• Description: 2 Input Nand Gate
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
DC Characteristics
High-level input
voltage
Low-level input
voltage
High-level
output voltage
Low-level output
voltage
Input leakage
current
Quiescent
supply current
Characteristics
Symbol
V
V
V
I
V
I
CC
OH
IN
OL
IH
IL
V
V
V
V
IN
IN
IN
IN
or V
= V
= V
= 5.5 V or GND
= V
IH
IL
IH
CC
Test Condition
or GND
I
I
I
I
I
I
I
I
I
I
OH
OH
OH
OH
OH
OL
OL
OL
OL
OL
⎯
⎯
= 100 µA
= 8 mA
= 16 mA
= 24 mA
= 32 mA
= −100 µA
= −8 mA
= −16 mA
= −24 mA
= −32 mA
3
V
2.3-5.5
2.3-5.5
CC
0-5.5
1.8
1.8
1.8
2.3
3.0
4.5
2.3
3.0
3.0
4.5
1.8
2.3
3.0
4.5
2.3
3.0
3.0
4.5
5.5
(V)
× V
× V
0.75
Min
0.7
1.7
2.2
2.9
4.4
1.9
2.4
2.3
3.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
CC
CC
Ta = 25°C
Typ.
2.15
2.68
0.15
0.22
0.22
1.8
2.3
3.0
4.5
2.8
4.2
0.1
⎯
⎯
⎯
⎯
⎯
⎯
0
0
0
0
× V
× V
Max
0.25
0.55
0.55
0.3
0.1
0.1
0.1
0.1
0.3
0.4
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
CC
CC
Ta = −40~85°C
× V
× V
0.75
Min
0.7
1.7
2.2
2.9
4.4
1.9
2.4
2.3
3.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TC7SZ00AFE
CC
CC
× V
× V
2006-01-12
0.25
0.55
0.55
Max
±10
0.3
0.1
0.1
0.1
0.1
0.3
0.4
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
CC
CC
Unit
µA
µA
V
V
V
V