tc7pa53fu TOSHIBA Semiconductor CORPORATION, tc7pa53fu Datasheet - Page 3

• Manufacturer Part Number: tc7pa53fu
• Description: Toshiba Cmos Digital Integrated Circuit Silicon Monolithic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
DC Electrical Characteristics
Input voltage
On resistance
V
On resistance
V
Control input leakage current
Switch I/O leakage current
Quiescent supply current
Increase in I
I/O
I/O
= V
= V
CC
CC
or GND
to GND
Characteristics
CC
per Input
High level
Low level
(Ta = −40 to 85°C)
Symbol
R
R
∆I
V
I
V
I
I
CC
SZ
ON
ON
IN
CC
IH
IL
V
V
V
V
V
V
V
V
V
0 < V
0 < V
0 < V
0 < V
V
V
V
V
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IH
= 0 V, I
= 1.9 V, I
= 3.6 V, I
= 0 V, I
= 3 V, I
= 0 V, I
= 2.3 V, I
= 0 V, I
= 1.8 V, I
= 0 to 3.6 V
= 0 to 3.6 V
= V
= 3 V
IN
IN
IN
IN
CC
3
< 3.6 V, I
< 3 V, I
< 2.3 V, I
< 1.8 V, I
or GND
Test Condition
O
O
O
O
O
O
O
O
O
= 24 mA
= 24 mA
= −24 mA
= 18 mA
= 6 mA
O
= −24 mA
= −24 mA
= −18 mA
= −6 mA
O
O
O
= 24 mA
⎯
⎯
= 24 mA
= 18 mA
= 6 mA
2.3 to 3.6
2.3 to 3.6
V
CC
1.8
1.8
3.6
3.6
3.6
3.0
3.0
2.3
2.3
1.8
1.8
3.6
3.0
2.3
1.8
3.6
3.6
3.6
3.6
(V)
× 0.75
× 0.75
V
V
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
CC
CC
TC7PA53FU
2005-11-29
× 0.25
× 0.25
Max
V
V
±5.0
10.0
20.0
140
750
19
18
16
21
17
25
20
32
26
21
23
42
⎯
⎯
CC
CC
Unit
µA
µA
µA
Ω
Ω
V