m29dw324d Numonyx, m29dw324d Datasheet
m29dw324d
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m29dw324d Summary of contents
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... Standby and Automatic Standby ■ 100,000 PROGRAM/ERASE CYCLES per BLOCK ■ ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29DW324DT: 225Ch – Bottom Device Code M29DW324DB: 225Dh March 2008 M29DW324DT M29DW324DB 3V Supply Flash Memory Figure 1. Packages TSOP48 ( 20mm ...
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... M29DW324DT, M29DW324DB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SUMMARY DESCRIPTION Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. TSOP Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 4. TFBGA48 Connections (Top view through package Table 2. Bank Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 5. Block Addresses (x8 Figure 6. Block Addresses (x16 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Address Inputs (A0-A20 Data Inputs/Outputs (DQ0-DQ7) ...
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... Figure 9. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 10.AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Table 13. Device Capacitance Table 14. DC Characteristics Figure 11.Read Mode AC Waveforms Table 15. Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Figure 12.Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Table 16. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 13.Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 M29DW324DT, M29DW324DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3/50 ...
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... PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Table 22. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 APPENDIX A.BLOCK ADDRESSES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Table 23. Top Boot Block Addresses, M29DW324DT Table 24. Bottom Boot Block Addresses, M29DW324DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 APPENDIX B.COMMON FLASH INTERFACE (CFI Table 25. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Table 26. CFI Query Identification String Table 27. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Table 28 ...
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... SUMMARY DESCRIPTION The M29DW324D Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per- formed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical block archi- tecture ...
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... M29DW324DT, M29DW324DB Figure 3. TSOP Connections 6/50 A15 1 A14 A13 A12 A11 A10 A9 A8 A19 M29DW324DT A20 M29DW324DB /WP RB A18 A17 A16 BYTE V SS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 DQ11 ...
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... E DQ8 DQ10 DQ12 G DQ9 DQ11 DQ1 DQ3 DQ4 Parameter Blocks No. of Block Size Blocks 8 8KByte/ 4 KWord — — M29DW324DT, M29DW324DB 5 6 A13 A9 A8 A12 A10 A14 A11 A15 DQ7 A16 BYTE DQ14 DQ15 DQ13 A–1 DQ6 V SS Main Blocks No ...
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... M29DW324DT, M29DW324DB Figure 5. Block Addresses (x8) Top Boot Block (x8) Address lines A20-A0, DQ15A-1 000000h 64 KByte or 32 KWord 00FFFFh Bank B 1F0000h 64 KByte or 32 KWord 1FFFFFh 200000h 64 KByte or 32 KWord 20FFFFh 3E0000h 64 KByte or 32 KWord 3EFFFFh Bank A 3F0000h 8 KByte or 4 KWord 3F1FFFh 3FE000h 8 KByte or ...
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... Main Blocks Bank A Total of 31 Main Blocks Total of 8 Bank B Parameter (1) Blocks 23 and 24 for a full listing of the Block Addresses. M29DW324DT, M29DW324DB Bottom Boot Block (x16) Address lines A20-A0 000000h 8 KByte or 4 KWord 000FFFh 007000h 8 KByte or 4 KWord 007FFFh 008000h 64 KByte or 32 KWord ...
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... M29DW324DT, M29DW324DB SIGNAL DESCRIPTIONS See Figure 2., Logic Diagram, and Names, for a brief overview of the signals connect this device. Address Inputs (A0-A20). The Address Inputs select the cells in the memory array to access dur- ing Bus Read operations. During Bus Write opera- ...
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... The PCB track widths must be sufficient to carry the currents required during Program and Erase operations Ground measurements. The device features two V which must be both connected to the system ground. M29DW324DT, M29DW324DB Supply Voltage pin and the V . CC3 is the reference for all voltage SS pro ...
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... There are five standard bus operations that control the device. These are Bus Read, Bus Write, Out- put Disable, Standby and Automatic Standby. The Dual Bank architecture of the M29DW324D allows read/write operations in Bank A, while read operations are being executed in Bank B or vice versa ...
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... V 5Dh (M29DW324DB 81h (factory locked 01h (not factory locked Data Inputs/Outputs DQ15A–1, DQ14-DQ0 Data Output Data Input Hi-Z Hi 0020h , 225Ch (M29DW324DT) ID 225Dh (M29DW324DB 81h (factory locked 01h (not factory locked DQ7-DQ0 Data Input Hi-Z Hi-Z 20h 13/50 ...
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... M29DW324DT, M29DW324DB COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. Failure to observe a valid sequence of Bus Write operations will result in the memory return- ing to Read mode. The long command sequences are imposed to maximize data security ...
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... The Unlock Bypass Reset command can be used to return to Read/Reset mode from Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass Reset command. Read/ Reset command does not exit from Unlock Bypass Mode. M29DW324DT, M29DW324DB is applied to the V /Write Protect pin PP voltage to the PP ...
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... M29DW324DT, M29DW324DB Chip Erase Command. The Chip Erase command can be used to erase the entire chip. Six Bus Write operations are re- quired to issue the Chip Erase Command and start the Program/Erase Controller. If any blocks are protected then these are ignored and all the other blocks are erased. If all of the blocks are protected the Chip Erase operation ap- pears to start but will terminate within about 100µ ...
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... Resume command will be accepted. An erase can be suspended and resumed more than once. Enter Extended Block Command The M29DW324D has an extra 64KByte block (Extended Block) that can only be accessed using the Enter Extended Block command. Three Bus write cycles are required to issue the Extended Block command ...
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... M29DW324DT, M29DW324DB Table 6. Commands, 8-bit mode, BYTE = V Command Add 1 Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Quadruple Byte Program 5 AAA Unlock Bypass 3 AAA Unlock Bypass Program 2 Unlock Bypass Reset 2 Chip Erase 6 AAA Block Erase 6+ AAA Erase Suspend 1 BKA Erase Resume 1 BKA ...
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... STATUS REGISTER The M29DW324D has a Status Register that pro- vides information on the current or previous Pro- gram or Erase operations executed in each bank. The various bits convey information and errors on the operation. Bus Read operations from any ad- dress within the Bank, always read the Status Register during Program and Erase operations ...
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... M29DW324DT, M29DW324DB Table 8. Status Register Bits Operation Address Program Bank Address Program During Erase Bank Address Suspend Program Error Bank Address Chip Erase Any Address Erasing Block Block Erase before timeout Non-Erasing Block Erasing Block Block Erase Non-Erasing Block Erasing Block ...
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... DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE The Multiple Bank Architecture M29DW324DT and M29DW324DB gives greater flexibility for software developers to split the code and data spaces within the memory array. The Dual Operations feature simplifies the software management of the device by allowing code to be executed from one bank while the other bank is being programmed or erased ...
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... M29DW324DT, M29DW324DB MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause per- manent damage to the device. Exposure to Abso- lute Maximum Rating conditions for extended periods may affect device reliability. These are Table 11. Absolute Maximum Ratings ...
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... Symbol Parameter C Input Capacitance IN C Output Capacitance OUT Note: Sampled only, not 100% tested. M29DW324DT, M29DW324DB Conditions summarized in and AC Measurement should check that the operating conditions in their circuit match the operating conditions when rely- ing on the quoted parameters. M29DW324D 70 Min Max 2 ...
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... M29DW324DT, M29DW324DB Table 14. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO (2) Supply Current (Read) I CC1 I Supply Current (Standby) CC2 Supply Current (Program/ (1,2) I CC3 Erase) V Input Low Voltage IL V Input High Voltage IH V /WP Voltage for Acceleration V /WP ...
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... Note: 1. Sampled only, not 100% tested. tAVAV VALID tAVQV tELQV tELQX tGLQX tGLQV tBHQV tBLQZ Parameter Test Condition M29DW324DT, M29DW324DB tAXQX tEHQX tEHQZ tGHQX tGHQZ VALID M29DW324D Min Max ...
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... M29DW324DT, M29DW324DB Figure 12. Write AC Waveforms, Write Enable Controlled A0-A21/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 16. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV Chip Enable Low to Write Enable Low ELWL Write Enable Low to Write Enable High ...
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... Program/Erase Valid to RB Low t BUSY EHRL High to Write Enable Low VCHWL VCS CC Note: 1. Sampled only, not 100% tested. tAVAV VALID tAVEL tWLEL tGHEL tELEH tDVEH Parameter M29DW324DT, M29DW324DB tELAX tEHWH tEHGL tEHEL tEHDX VALID tEHRL M29DW324D 70 Min 70 Min 0 Min 45 Min 45 Min 0 ...
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... M29DW324DT, M29DW324DB Figure 14. Toggle and Alternative Toggle Bits Mechanism, Chip Enable Controlled Address Outside the Bank A0-A20 Being Programmed or Erased E G Data (1) (2) DQ2 /DQ6 Read Operation outside the Bank Being Programmed or Erased Note: 1. The Toggle bit is output on DQ6. 2. The Alternative Toggle bit is output on DQ2. ...
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... Rise and Fall Time t PP VHVPP Note: 1. Sampled only, not 100% tested. Figure 17. Accelerated Program Timing Waveforms / tVHVPP tPHWL, tPHEL, tPHGL tPLYH Parameter ID M29DW324DT, M29DW324DB tRHWL, tRHEL, tRHGL tPHPHH AI02931B M29DW324D 70 90 Min 50 50 Min 0 0 Min ...
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... M29DW324DT, M29DW324DB PACKAGE MECHANICAL Figure 18. 48 Lead Plastic Thin Small Outline, 12x20 mm, Bottom View Package Outline DIE Note: Drawing not to scale. Table 20. 48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data Symbol Typ A A1 0.100 A2 1.000 B 0.220 ...
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... M29DW324DT, M29DW324DB ddd A2 BGA-Z32 inches Typ Min 0.0102 0.0138 0.2362 0.2323 0.1575 – 0.3150 0.3110 0.2205 – 0.0315 – 0.0394 – ...
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... M29DW324DT, M29DW324DB PART NUMBERING Table 22. Ordering Information Scheme Example: Device Type M29 Architecture D = Dual Operation Operating Voltage 2.7 to 3.6V CC Device Function 324D = 32 Mbit (x8/x16), Boot Block, half-half partitioning Array Matrix T = Top Boot B = Bottom Boot Speed Package N = TSOP48 20mm ZE = TFGBA48 8mm, 0 ...
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... APPENDIX A. BLOCK ADDRESSES Table 23. Top Boot Block Addresses, M29DW324DT (Kbytes/ Block Kwords) 0 64/32 1 64/32 2 64/32 3 64/32 4 64/32 5 64/32 6 64/32 7 64/32 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 14 64/32 15 64/32 16 64/32 17 64/32 18 64/32 19 64/32 20 64/32 21 64/32 22 64/32 23 64/32 24 64/32 25 64/32 26 64/32 27 64/32 28 64/32 29 64/32 30 64/32 31 64/32 Protection Block (x8) Group Protection Group 000000h–00FFFFh 010000h–01FFFFh Protection Group 020000h–02FFFFh 030000h– ...
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... M29DW324DT, M29DW324DB (Kbytes/ Block Kwords) 32 64/32 33 64/32 34 64/32 35 64/32 36 64/32 37 64/32 38 64/32 39 64/32 40 64/32 41 64/32 42 64/32 43 64/32 44 64/32 45 64/32 46 64/32 47 64/32 48 64/32 49 64/32 50 64/32 51 64/32 52 64/32 53 64/32 54 64/32 55 64/32 56 64/32 57 64/32 58 64/32 59 64/32 60 64/32 61 64/32 62 64/32 34/50 Protection Block (x8) Group 200000h–20FFFFh 210000h–21FFFFh Protection Group 220000h–22FFFFh 230000h–23FFFFh 240000h–24FFFFh 250000h–25FFFFh Protection Group 260000h–26FFFFh 270000h– ...
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... Protection Group 3F4000h–3F5FFFh Protection Group 3F6000h–3F7FFFh Protection Group 3F8000h–3F9FFFh Protection Group 3FA000h–3FBFFFh Protection Group 3FC000h–3FDFFFh Protection Group 3FE000h–3FFFFFh M29DW324DT, M29DW324DB (x16) (1) (1) 1F8000h–1F8FFFh (1) (1) 1F9000h–1F9FFFh (1) (1) 1FA000h–1FAFFFh (1) (1) 1FB000h–1FBFFFh ...
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... M29DW324DT, M29DW324DB Table 24. Bottom Boot Block Addresses, M29DW324DB (Kbytes/ Block Kwords) 0 8/4 1 8/4 2 8/4 3 8/4 4 8/4 5 8/4 6 8/4 7 8/4 8 64/32 9 64/32 10 64/32 11 64/32 12 64/32 13 64/32 14 64/32 15 64/32 16 64/32 17 64/32 18 64/32 19 64/32 20 64/32 21 64/32 22 64/32 23 64/32 24 64/32 25 64/32 26 64/32 27 64/32 28 64/32 29 64/32 30 64/32 36/50 Protection Block (x8) Group Protection Group 000000h-001FFFh Protection Group 002000h-003FFFh Protection Group 004000h-005FFFh Protection Group 006000h-007FFFh ...
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... Protection Group 57 64/32 58 64/32 59 64/32 60 64/32 Protection Group 61 64/32 62 64/32 M29DW324DT, M29DW324DB (x8) 180000h-18FFFFh 0C0000h–0C7FFFh 190000h-19FFFFh 0C8000h–0CFFFFh 1A0000h-1AFFFFh 0D0000h–0D7FFFh 1B0000h-1BFFFFh 0D8000h–0DFFFFh 1C0000h-1CFFFFh 0E0000h–0E7FFFh 1D0000h-1DFFFFh 0E8000h–0EFFFFh 1E0000h-1EFFFFh 0F0000h–0F7FFFh 1F0000h-1FFFFFh 0F8000h–0FFFFFh 200000h-20FFFFh 100000h–107FFFh 210000h-21FFFFh 108000h–10FFFFh 220000h-22FFFFh 110000h– ...
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... M29DW324DT, M29DW324DB (Kbytes/ Block Kwords) 63 64/32 64 64/32 65 64/32 66 64/32 67 64/32 68 64/32 69 64/32 70 64/32 Note: 1. Used as the Extended Block Addresses in Extended Block mode. 38/50 Protection Block (x8) Group 380000h-38FFFFh 390000h-39FFFFh Protection Group 3A0000h-3AFFFFh 3B0000h-3BFFFFh 3C0000h-3CFFFFh Protection Group 3D0000h-3DFFFFh 3E0000h-3EFFFFh Protection Group 3F0000h-3FFFFFh (x16) 1C0000h–1C7FFFh 1C8000h–1CFFFFh 1D0000h–1D7FFFh 1D8000h– ...
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... Address for Primary Algorithm extended Query table (see Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported Address for Alternate Algorithm extended Query table M29DW324DT, M29DW324DB show the addresses used to retrieve the Table 30., Security Code Area). This area ...
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... Note: For the M29DW324DB, Region 1 corresponds to addresses 000000h to 007FFFh and Region 2 to addresses 008000h to 1FFFFFh. For the M29DW324DT, Region 1 corresponds to addresses 1F8000h to 1FFFFFh and Region 2 to addresses 000000h to 1F7FFFh. 40/50 Description V Logic Supply Minimum Program/Erase voltage ...
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... Read only Read and Write Block Protection 00 = not supported number of blocks in per group Temporary Block Unprotect 00 = not supported supported Block Protect /Unprotect 04 = M29DW324D Simultaneous Operations number of blocks in Bank B Burst Mode not supported supported Page Mode not supported page word page word V ...
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... M29DW324DT, M29DW324DB APPENDIX C. EXTENDED MEMORY BLOCK The M29DW324D has an extra block, the Extend- ed Block, that can be accessed using a dedicated command. This Extended Block is 32 KWords in x16 mode and 64 KBytes in x8 mode used as a security block (to provide a permanent security identifica- tion number store additional information. ...
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... Others = A12-A20 Block Address IH Others = X APPENDIX D., Tables 23 and 24. M29DW324DT, M29DW324DB , gives a summary of each operation. IL (1) . This can be achieved without violating Figure 23., In-System Flowchart when using the In-Sys tem Technique to protect the Extended Block ...
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... M29DW324DT, M29DW324DB Figure 20. Programmer Equipment Group Protect Flowchart Note: Block Protection Groups are shown in 44/50 START ADDRESS = GROUP ADDRESS Wait 4µ Wait 100µ A0 Wait 4µ ...
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... Wait 10ms ADDRESS = CURRENT GROUP ADDRESS A1 Wait 4µ Wait 60ns Read DATA NO YES DATA = 00h ++n YES FAIL APPENDIX D., Tables 23 and 24. M29DW324DT, M29DW324DB INCREMENT CURRENT GROUP LAST NO GROUP YES PASS AI05575 45/50 ...
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... M29DW324DT, M29DW324DB Figure 22. In-System Equipment Group Protect Flowchart Note: 1. Block Protection Groups are shown can be either 46/50 START WRITE 60h ADDRESS = GROUP ADDRESS WRITE 60h ADDRESS = GROUP ADDRESS Wait 100µ ...
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... ADDRESS = CURRENT GROUP ADDRESS Wait 4µs READ DATA ADDRESS = CURRENT GROUP ADDRESS DATA NO YES = 00h YES APPENDIX D., Tables 23 and 24. M29DW324DT, M29DW324DB INCREMENT CURRENT GROUP NO LAST GROUP YES ISSUE READ/RESET COMMAND PASS AI05577 47/50 ...
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... M29DW324DT, M29DW324DB REVISION HISTORY Table 33. Document Revision History Date Version 19-Apr-2002 -01 Document written Revision numbering modified: a minor revision will be indicated by incrementing the digit after the dot, and a major revision, by incrementing the digit before the dot (revision version 01 equals 1.0). Revision History moved to end of document. ...
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... Date Version 27-Mar-2008 8.0 Applied Numonyx branding. M29DW324DT, M29DW324DB Revision Details 49/50 ...
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... M29DW324DT, M29DW324DB INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT ...