tc58dvg02a1ft00 TOSHIBA Semiconductor CORPORATION, tc58dvg02a1ft00 Datasheet

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tc58dvg02a1ft00

Manufacturer Part Number
tc58dvg02a1ft00
Description
Toshiba Digital Integrated Circuit Silicon Gate Cmos
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number:
tc58dvg02a1ft00BBH
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Quantity:
20 000
TENTATIVE
1-GBIT (128M
DESCRIPTION
Read-Only Memory (NAND E
static register which allows program and read data to be transferred between the register and the memory cell array
in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
PIN ASSIGNMENT
RY
32 pages).
The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable
The TC58DVG02A1 is a serial-type memory device which utilizes the I/O pins for both address and data
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
GND
Organization
Modes
Mode control
CLE
ALE
V
/
V
WE
WP
RE
CE
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
BY
CC
SS
Memory cell allay 528
Register
Page size
Block size
Read, Reset, Auto Page Program,
Auto Block Erase, Status Read,
Multi Block Program, Multi Block Erase
Serial input/output
Command control
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 BITS) CMOS NAND E
528
528 bytes
(16K
(TOP VIEW)
2
PROM) organized as 528 bytes
256K
8
512) bytes
8
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
NC
NC
NC
I/O8
I/O7
I/O6
I/O5
NC
NC
NC
V
V
NC
NC
NC
I/O4
I/O3
I/O2
I/O1
NC
NC
NC
NC
CC
SS
2
PROM
PIN NAMES
Power supply
Program/Erase Cycles 1E5 cycle (with ECC)
Access time
Operating current
Package
I/O1 to I/O8
32 pages
Cell array to register 25 s max
Serial Read Cycle
Read (50 ns cycle)
Program (avg.)
Erase (avg.)
Standby
TSOPI48-P-1220-0.50 (Weight:
RY
GND
CLE
V
ALE
V
WE
WP
CE
RE
CC
SS
/
BY
8192 blocks. The device has a 528-byte
I/O port
Chip enable
Write enable
Read enable
Command latch enable
Address latch enable
Write protect
Ready/Busy
Ground input
Power supply
Ground
TC58DVG02A1FT00
V
10 mA typ.
10 mA typ.
10 mA typ.
50 A max.
50 ns min
CC
2003-01-10 1/44
2.7 V to 3.6 V
512 bytes: 528 bytes
g typ.)
000707EBA1

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