led760-40k42

Manufacturer Part Numberled760-40k42
DescriptionMid-ir Leds,high Power Leds,gap-leds,gaalas-leds,gan-leds Led760-40k42
ManufacturerRoithner LaserTechnik GmbH
led760-40k42 datasheet
 


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LED760-40K42
LED760-40K42 is AlGaAs LED mounted on TO-46 stem with unspherical glass lens,
being designed for high beam uses.
On forward bias, it emits a spectral band of radiation, which peaks at 760nm.
♦Features
1) High radiated intensity
2) High Reliability
♦Specifications
1) Product Name
Infrared LED Lamp
2) Type No.
LED760-40K42
3) Chip Spec.
(1) Material
AlGaAs
(2) Peak Wavelength
760nm
4) Package
(1) Type
TO-46 stem
(2) Lens
Unspherical glass lens
(3) Cap
Gold plated
♦Absolute Maximum Ratings
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
Soldering condition : Soldering condition must be completed within 3 seconds at 260°C
♦Electro-Optical Characteristics
Item
Symbol
Forward Voltage
V
F
Reverse Current
I
R
Total Radiated Power
P
O
Radiant Intensity
I
E
λ
Peak Wavelength
P
∆λ
Half Width
θ
Viewing Half Angle
1/2
tr
Rise Time
tf
Fall Time
Total Radiated Power is measured by Photodyne #500
Radiant Intensity is measured by Tektronix J-6512.
stem type LED with high beam
Symbol
Maximum Rated Value
P
200
D
I
100
F
I
500
FP
V
5
R
T
-30 ~ +80
OPR
T
-30 ~ +100
STG
T
260
SOL
Condition
Minimum
I
=50mA
F
V
=5V
R
I
=50mA
6
F
I
=50mA
F
740
I
=50mA
F
I
=50mA
F
I
=50mA
F
I
=50mA
F
I
=50mA
F
♦Outer dimension(Unit:mm)
Unit
Ambient Temperature
mW
Ta=25°C
mA
Ta=25°C
mA
Ta=25°C
V
Ta=25°C
°C
°C
°C
Typical
Maximum
Unit
1.85
2.00
V
10
uA
10
mW
60.0
mW/sr
760
780
nm
30
nm
±6
deg.
80
ns
80
ns