led760-40k42 Roithner LaserTechnik GmbH, led760-40k42 Datasheet

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led760-40k42

Manufacturer Part Number
led760-40k42
Description
Mid-ir Leds,high Power Leds,gap-leds,gaalas-leds,gan-leds Led760-40k42
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
LED760-40K42
LED760-40K42 is AlGaAs LED mounted on TO-46 stem with unspherical glass lens,
being designed for high beam uses.
On forward bias, it emits a spectral band of radiation, which peaks at 760nm.
♦Features
1) High radiated intensity
2) High Reliability
♦Specifications
1) Product Name
2) Type No.
3) Chip Spec.
(1) Material
(2) Peak Wavelength
4) Package
(1) Type
(2) Lens
(3) Cap
♦Absolute Maximum Ratings
♦Electro-Optical Characteristics
Forward Voltage
Reverse Current
Total Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
Soldering condition : Soldering condition must be completed within 3 seconds at 260°C
Total Radiated Power is measured by Photodyne #500
Radiant Intensity is measured by Tektronix J-6512.
Item
Item
Infrared LED Lamp
LED760-40K42
AlGaAs
760nm
TO-46 stem
Unspherical glass lens
Gold plated
Symbol
θ
P
V
∆λ
λ
I
I
tr
tf
R
E
P
1/2
O
F
Symbol
T
T
T
P
I
V
OPR
STG
SOL
I
FP
F
Condition
D
R
I
I
I
I
I
I
I
I
F
F
F
F
F
F
F
F
V
=50mA
=50mA
=50mA
=50mA
=50mA
=50mA
=50mA
=50mA
R
=5V
stem type LED with high beam
Maximum Rated Value
Minimum
-30 ~ +100
-30 ~ +80
740
6
200
100
500
260
5
Typical
♦Outer dimension(Unit:mm)
1.85
60.0
760
10
30
±6
80
80
mW
Unit
mA
mA
°C
°C
°C
V
Maximum
2.00
780
10
Ambient Temperature
mW/sr
deg.
Unit
mW
nm
nm
Ta=25°C
Ta=25°C
Ta=25°C
Ta=25°C
uA
ns
ns
V

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