r2j20657np Renesas Electronics Corporation., r2j20657np Datasheet

r2j20657np

Manufacturer Part Number

r2j20657np

Description

Integrated Driver - Mos Fet Drmos

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.R2J20657NP.pdf (17 pages)

Current page: 1 of 17
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R2J20657NP

Integrated Driver - MOS FET (DrMOS)

Description

The R2J20657NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in

a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating

the need for an external SBD for this purpose.

Features

 Based on Intel 6  6 DrMOS Specification.

 Built-in power MOS FET suitable for Desktop, Server application.

 Low-side MOS FET with built-in SBD for lower loss and reduced ringing.

 Built-in driver circuit which matches the power MOS FET

 Built-in tri-state input function which can support a number of PWM controllers

 High-frequency operation (above 1 MHz) possible

 VIN operating-voltage range: 20 Vmax

 Large average output current (Max.40 A)

 Achieve low power dissipation

 Controllable driver: Remote on/off

 Low-side MOS FET disabled function for DCM operation

 Double thermal protection: Thermal Warning & Thermal Shutdown

 Built-in bootstrapping Switch

 Small package: QFN40 (6 mm  6 mm  0.95 mm)

 Terminal Pb-free/Halogen-free

Outline

R07DS0247EJ0100 Rev.1.00

Jan 25, 2011

LSDBL#

DISBL#

THWN

PWM

VCIN Reg5V

MOS FET Driver

CGND

BOOT

Integrated Driver-MOS FET (DrMOS)

QFN40 package 6 mm × 6 mm

PGND

VIN

VSWH

Preliminary

Driver

Pad

Low-side MOS Pad

(Bottom view)

High-side

MOS Pad

R07DS0247EJ0100

Datasheet

Jan 25, 2011

Page 1 of 16

Rev.1.00

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