tps844af TOSHIBA Semiconductor CORPORATION, tps844af Datasheet - Page 3

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tps844af

Manufacturer Part Number
tps844af
Description
Toshiba Photo-ic Silicon Epitaxial Planar
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Precautions
Note 3: Switching time measurement circuit and waveform.
TPS842A(F)
TPS844(F)
When you consider a combined use with an LED, be sure to use an infrared LED. Visible rays in wavelength of
less than 700 nm cannot be detected.
Make sure the shielding plate that is used to detect positions is manufactured from materials with superior
light-shielding characteristics. Insufficient shield can cause malfunction.
Photo ICs contain a high-sensitivity amplifier. Toshiba recommends connecting a capacitor of about 0.01 μF that
has good high-frequency characteristics between V
Please install so that disturbance light is not irradiated by these products.
When disturbance light (incandescence light etc.) 700 nm or more is detected, it may incorrect-operate. Please
perform sufficient evaluation and verification by set.
During 100 μs after turning on V
(INFRARED LED)
(INFRARED LED)
AMP
AMP
VOL.REG.
VOL.REG.
(TPS842A(F))
(TPS844(F))
CC
, output voltage changes for stabilizing the inner circuit.
CC
3
and GND near the device to prevent unwanted oscillation.
TPS842A(F),TPS844(F)
2007-10-01

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