MC100EL52DG ON Semiconductor, MC100EL52DG Datasheet - Page 5

• Manufacturer Part Number: MC100EL52DG
• Description: IC FLIP FLOP ECL DIFF CLK 8SOIC
• Manufacturer: ON Semiconductor
• Series: 100ELr
• Type: D-Typer

Specifications of MC100EL52DG

• Function: Standard
• Output Type: Differential
• Number Of Elements: 1
• Number Of Bits Per Element: 1
• Frequency - Clock: 2.8GHz
• Delay Time - Propagation: 365ps
• Trigger Type: Positive Edge
• Voltage - Supply: 4.2 V ~ 5.7 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output High, Low: -
• Other names: MC100EL52DGOS

Table 8. AC CHARACTERISTICS
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
14. 10 Series: V
15. V
f
t
t
t
t
t
V
t
t
t
Symbol
max
PLH
PHL
S
H
PW
JITTER
r
f
PP
100 Series: V
PP(
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min) is minimum input swing for which AC parameters guaranteed. The device has a DC gain of ≈40.
Maximum Toggle Frequency
Propagation Delay
to Output CLK
Setup Time
Hold Time
Minimum Pulse Width
Input Swing (Note 15)
Cycle−to−Cycle Jitter
Output Rise/Fall Times Q
(20% − 80%)
EE
EE
can vary +0.25 V / −0.5 V for +25°C and +85°C. or V
can vary +0.8 V / −0.5 V.
Characteristic
(See Application Note AND8020/D − Termination of ECL Logic Devices.)
Driver
Device
Figure 2. Typical Termination for Output Driver and Device Evaluation
V
CC
Q
Q
= 5.0 V; V
EE
Min
225
125
150
400
150
100
1.8
= 0 V or V
Z
Z
http://onsemi.com
o
o
= 50 W
= 50 W
−40°C
TBD
Typ
335
225
2.5
50
0
CC
50 W
V
5
TT
EE
= 0 V; V
= V
1000
Max
515
350
can vary +0.06 V / −0.5 V for −40°C
V
CC
TT
EE
− 3.0 V
50 W
= −5.0 V (Note 14)
Min
275
125
150
400
150
100
2.2
25°C
TBD
Typ
365
225
2.8
50
0
D
D
1000
Max
465
350
Receiver
Device
Min
320
125
150
400
150
100
2.2
85°C
TBD
Typ
410
225
2.8
50
0
1000
Max
510
350
GHz
Unit
mV
ps
ps
ps
ps
ps
ps