si7625dn Vishay, si7625dn Datasheet

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si7625dn

Manufacturer Part Number
si7625dn
Description
P-channel 30 V D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
si7625dn-T1-GE3
Manufacturer:
VISHAY
Quantity:
243
Part Number:
si7625dn-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7625dn-T1-GE3
0
Company:
Part Number:
si7625dn-T1-GE3
Quantity:
95
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 81 °C/W.
d. Package limited.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65737
S10-0638-Rev. A, 22-Mar-10
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
- 30
(V)
8
3.30 mm
D
7
D
0.011 at V
0.007 at V
6
D
PowerPAK
R
Bottom View
5
DS(on)
D
Si7625DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
GS
GS
= - 4.5 V
(Ω)
= - 10 V
J
1
= 150 °C)
a, c
®
S
1212-8
2
S
P-Channel 30 V (D-S) MOSFET
3
S
I
3.30 mm
- 35
- 35
D
4
(A)
G
d
d
e, f
A
Q
39.5 nC
= 25 °C, unless otherwise noted
g
(Typ.)
Steady State
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100% R
• 100% UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• Notebook Adapter Switch
• Notebook Load Switch
Definition
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
g
D
stg
Tested
®
Power MOSFET
Typical
1.9
26
- 55 to 150
- 17.3
- 13.8
- 3.0
3.7
2.4
Limit
- 35
- 35
- 35
± 20
Maximum
- 30
- 80
- 20
260
20
52
33
G
a, b
a, b
a, b
d
d
a, b
a, b
d
2.4
Vishay Siliconix
33
P-Channel MOSFET
Si7625DN
S
D
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si7625dn Summary of contents

Page 1

... Bottom View Ordering Information: Si7625DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7625DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S10-0638-Rev. A, 22-Mar- thru 1.5 2.0 2.5 6000 4800 3600 2400 =10V 1200 1 1.4 1.2 1 0.8 0 Si7625DN Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C ...

Page 4

... Si7625DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.5 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.030 0.024 °C J 0.018 0.012 0.006 0.000 0.8 1.0 1.2 0 100 I = 250 μA ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7625DN Vishay Siliconix 150 100 125 150 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 5 ...

Page 6

... Si7625DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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