si7625dn Vishay, si7625dn Datasheet - Page 4

• Manufacturer Part Number: si7625dn
• Description: P-channel 30 V D-s Mosfet
• Manufacturer: Vishay

Si7625DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.4
0.01
100
0.8
0.5
0.2
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
- Source-to-Drain Voltage (V)
0
Threshold Voltage
T
T
0.4
J
J
- Temperature (°C)
= 150 °C
25
0.6
50
75
0.01
100
0.1
0.8
T
10
I
1
0.01
J
D
I
= 25 °C
D
= 5 mA
100
Limited by R
= 250 μA
* V
1.0
GS
125
> minimum V
V
Single Pulse
T
0.1
DS
A
DS(on)
1.2
150
Safe Operating Area
= 25 °C
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
DS(on)
0.030
0.024
0.018
0.012
0.006
0.000
10
100
80
60
40
20
is specified
0
0
0
I
0 .
D
On-Resistance vs. Gate-to-Source Voltage
0
= 15 A
1
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
T
J
100
2
V
= 25 °C
GS
0.01
- Gate-to-Source Voltage (V)
4
Pulse (s)
T
J
S10-0638-Rev. A, 22-Mar-10
0.1
= 125 °C
Document Number: 65737
6
1
8
10
1
0