tc75s57f TOSHIBA Semiconductor CORPORATION, tc75s57f Datasheet - Page 3

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tc75s57f

Manufacturer Part Number
tc75s57f
Description
Single Comparator
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Electrical Characteristics
Electrical Characteristics
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Supply current
Voltage gain
Sink current
Source current
Output voltage
Operating supply voltage
Propagation delay time (turn on)
Propagation delay time (turn off)
Response time
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Supply current
Sink current
Source current
Output voltage
Propagation delay time (turn on)
Propagation delay time (turn off)
Response time
Note: This device’s current consumption increases as its operating frequency increases. Note that the power
dissipation should not exceed the allowable power dissipation.
Characteristics
Characteristics
(unless otherwise specified, V
(unless otherwise specified, V
Symbol
t
t
t
t
Symbol
CMV
CMV
I
I
I
PLH (1)
PLH (2)
PHL (1)
PHL (2)
I
source
source
DD
DD
V
V
t
t
V
t
t
t
t
I
V
I
V
V
V
G
sink
TLH
THL
sink
PLH
PHL
TLH
THL
I
I
IO
OH
DD
IO
OH
I
OL
I
OL
IO
IO
I
I
V
(Note)
(Note)
IN
IN
Circuit
Circuit
Test
Test
3
V
V
I
I
Over drive = 100 mV
TTL step input
Over drive = 100 mV
TTL step input
Over drive = 100 mV
Over drive = 100 mV
V
V
I
I
Over drive = 100 mV
Over drive = 100 mV
Over drive = 100 mV
Over drive = 100 mV
sink
source
sink
source
OL
OH
OL
OH
= 0.5 V
= 5.0 mA
= 0.5 V
= 5.0 mA
= 4.5 V
= 2.5 V
= 5.0 mA
= 5.0 mA
Test Condition
Test Condition
DD
DD
= 5 V, V
= 3 V, V
SS
SS
2.65
Min
Min
4.7
1.8
13
0
9
0
6
3
TC75S57F/FU/FE
= GND, Ta = 25°C)
= GND, Ta = 25°C)
Typ.
Typ.
0.15
2.85
110
140
100
110
0.1
4.9
±1
94
25
21
90
90
70
11
±1
18
15
90
1
1
7
1
1
7
8
2007-11-01
0.35
Max
Max
220
200
4.1
0.3
7.0
2.1
±7
±7
Unit
Unit
mV
mA
mA
mV
mA
mA
pA
pA
μA
dB
pA
pA
μA
ns
ns
ns
ns
ns
ns
V
V
V
V
V

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