tc75s59f TOSHIBA Semiconductor CORPORATION, tc75s59f Datasheet - Page 3

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tc75s59f

Manufacturer Part Number
tc75s59f
Description
Single Comparator
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Electrical Characteristics
Electrical Characteristics
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Supply current
Voltage gain
Sink current
Output leak current
Output voltage
Operating supply voltage
Propagation delay time (turn on)
Propagation delay time (turn off)
Response time
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Supply current
Sink current
Output leak current
Output voltage
Propagation delay time (turn on)
Propagation delay time (turn off)
Response time
Note: This device’s current consumption increases as its operating frequency increases. Note that the power
dissipation should not exceed the allowable power dissipation.
Characteristics
Characteristics
(V
(V
DD
DD
Symbol
t
t
t
t
Symbol
CMV
CMV
I
PLH (1)
PLH (2)
PHL (1)
PHL (2)
I
I
I
DD
DD
LEAK
V
t
t
LEAK
t
t
t
t
= 5 V, V
I
V
= 3 V, V
I
V
V
V
G
sink
TLH
THL
sink
PLH
PHL
TLH
THL
I
I
IO
DD
IO
I
OL
I
OL
IO
IO
I
I
V
(Note)
(Note)
IN
IN
SS
Circuit
SS
Circuit
Test
Test
= GND, Ta = 25°C)
= GND, Ta = 25°C)
3
V
V
I
Over drive = 100 mV
TTL step input
Over drive = 100 mV
TTL step input
Over drive = 100 mV
Over drive = 100 mV
V
V
I
Over drive = 100 mV
Over drive = 100 mV
Over drive = 100 mV
Over drive = 100 mV
sink
sink
OL
O
OL
O
= 5 V
= 3 V
= 0.5 V
= 5.0 mA
= 0.5 V
= 5.0 mA
Test Condition
Test Condition
Min
Min
1.8
13
0
0
6
TC75S59F/FU/FE
Typ.
Typ.
0.15
110
200
140
160
100
160
170
0.1
±1
94
25
80
60
±1
18
70
1
1
5
3
1
1
5
3
2007-11-01
0.35
Max
Max
220
200
4.1
0.3
7.0
2.1
±7
±7
Unit
Unit
mV
mA
mV
mA
pA
pA
μA
dB
nA
pA
pA
μA
nA
ns
ns
ns
ns
ns
ns
V
V
V
V
V

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