tc59lm814cft TOSHIBA Semiconductor CORPORATION, tc59lm814cft Datasheet - Page 26

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tc59lm814cft

Manufacturer Part Number
tc59lm814cft
Description
4,194,304 / 8,388,608-words X 4 Banks X 16 / 8-bits Network Fcram
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
x8
x16
SINGLE BANK WRITE with VARIABLE WRITE LENGTH (VW) CONTROL
(CL = 3, BL = 4, Sequential mode)
DQ8~DQ15
DQ0~DQ7
Command
Command
Address
Address
(input)
(input)
UDQS
(input)
(input)
UDQS
(input)
(input)
DQS
CLK
CLK
DQ
Note:
WRA
WRA
(Write First Two Words)
UA
UA
0
Upper byte: Write First Two Words
Lower byte: Write First One Word
DQS input must be continued till end of burst count even if some of laster data is masked.
Refer to "VW Truth Table".
UVW=2
LA=#3
VW=2
LA =#3
LVW=1
LAL
LAL
1
I
RC
Address #3 #0
Address #3 #0
Address #3
2
= 5cycles
DESL
DESL
D0 D1
D0 D1
D0
3
(#0)
Last two data are masked.
Last two data are masked.
(#1)
(#1)
(#1)
4
Last three data are
(#2)
(#2)
(#2)
WRA
WRA
UA
UA
(Write First One Word)
5
Upper byte: Write First One Word
Lower byte: Write First One Word
UVW=1
LA=#1
VW=1
LVW=1
LA=#1
LAL
LAL
6
TC59LM814/06CFT-50,-55,-60
I
RC
7
= 5cycles
DESL
DESL
D0
D0
D0
#1 (#2)
#1 (#2)
#1 (#2)
8
Last three data are
Last three data are
Last three data are
(#3)
(#3)
(#3)
9
2002-08-19 26/38
(#0)
(#0)
(#0)
WRA
WRA
UA
UA
10
UVW=2
LA=#3
VW=2
LVW=1
LA=#3
LAL
LAL
11

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