ald110800 Advanced Linear Devices Inc (ALD), ald110800 Datasheet

ald110800

Manufacturer Part Number

ald110800

Description

Performance Characteristics Of Epad Matched Pair Mosfet Arrays

Manufacturer

Advanced Linear Devices Inc (ALD)

Datasheet

1.ALD110800.pdf (5 pages)

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GENERAL DESCRIPTION

ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic quad/dual

N-Channel MOSFETs matched at the factory using ALD’s proven EPAD®

CMOS technology. These devices are intended for low voltage, small sig-

nal applications.

This EPAD MOSFET Array product family (EPAD MOSFET) is available in

the three separate categories, each providing a distinctly different set of

device electrical specifications and characteristics. The first category is the

ALD110800/ALD110900 zero-threshold mode EPAD MOSFETs. The sec-

ond category is the ALD1108xx/ALD1109xx enhancement mode EPAD

MOSFETs. The third category is the ALD1148xx/ALD1149xx depletion mode

EPAD MOSFETs. (The suffix “xx” denotes threshold voltage in 0.0 V steps,

for example, xx=08 denotes 0.8V).

The ALD110800/ALD110900 (quad/dual) are EPAD MOSFETs in which the

individual threshold voltage of each MOSFET is fixed at zero. The thresh-

old voltage is defined as Ids =1uA @ Vds=0.1V when the gate voltage Vgs

= 0.0V. Zero threshold devices operate in the enhancement region when

operated above threshold voltage and current level (Vgs>0.0V and Ids>1

uA) and subthreshold region when operated at or below threshold voltage

and current level (Vgs<=0.0V and Ids<1 uA). This device, along with other

very low threshold voltage members of the product family, constitute a class

of EPAD MOSFETs that enable ultra low supply voltage operation and

nanopower type of circuit designs, applicable in either analog or digital cir-

cuits.

The ALD1108xx/ALD1109xx (quad/dual) product family features precision

matched enhancement mode EPAD MOSFET devices, which require a

positive bias voltage to turn on. Precision threshold values such as +1.40V,

+0.80V, +0.20V are offered. No conductive channel exists between the

source and drain at zero applied gate voltage for these devices, except that

the +0.20V version has a subthreshold current at about 20 nA.

The ALD1148xx/ALD1149xx (quad/dual) features depletion mode EPAD

MOSFETs, which are normally-on devices when the gate bias voltage is at

zero volt. The depletion mode threshold voltage is at a negative voltage

level at which the EPAD MOSFET turns off. Without a supply voltage and/

or with Vg=0.0V the EPAD MOSFET device is already turned on and exhib-

its a defined and controlled on-resistance between the source and drain

terminals.

The ALD1148xx/ALD1149xx depletion mode EPAD MOSFETs are different

from most other types of depletion mode MOSFETs and certain types of

JFETs in that they do not exhibit high gate leakage currents and channel/

junction leakage currents. When negative signal voltages are applied to

the gate terminal, the designer/user can depend on the EPAD MOSFET

device to be controlled, modulated and turned off precisely. The device can

be modulated and turned-off under the control of the gate voltage in the

same manner as the enhancement mode EPAD MOSFET and the same

device equations apply.

EPAD MOSFETs are designed for exceptional device electrical character-

istics matching. As these devices are on the same monolithic chip, they

also exhibit excellent tempco tracking characteristics. Besides matched pair

electrical characteristics, each individual EPAD MOSFET also exhibits tightly

controlled parameters, enabling the user to depend on design limits. Even

units from different batches have well matched characteristics.

INEAR

DVANCED

EVICES,

NC.

EPAD® MATCHED PAIR MOSFET ARRAYS

PERFORMANCE CHARACTERISTICS OF

www.aldinc.com

ALD1108XX/ALD1109XX/ALD1148XX/ALD1149XX

EPAD MOSFETs are ideal for minimum offset voltage and

differential thermal response, and they are used for switch-

ing and amplifying applications in low voltage (1V to 10V

or +/-0.5V to +/-5V) or ultra low voltage (less than 1V or +/

- 0.5V) systems. They feature low input bias current (less

than 30 pA max.), ultra low power (microWatt) or Nanopower

(power measured in nanoWatt) operation, low input capaci-

tance and fast switching speed. These devices can be used

where a combination of these characteristics are desired.

KEY APPLICATION ENVIRONMENT

EPAD( MOSFET Array products are for circuit applications

in one or more of the following operating environments:

* Low voltage: 1V to 10V or +/- 0.5V to +/- 5V

* Ultra low voltage: less than 1V or +/- 0.5V

* Low power: voltage x current = power measured in mi-

crowatt

* Nanopower: voltage x current = power measured in

nanowatt

* Precision matching and tracking of two or more of the

MOSFETs

N/C*

*N/C pins are internally connected.

Connect to V- to reduce noise

V -

PC, SC PACKAGES

PA, SA PACKAGES

M 4

M 1

ALD110800/ALD110900/

QUAD

DUAL

M 2

M 3

M 2

V -

N/C*

EPAD

Related parts for ald110800

ald110800 Summary of contents

Page 1

... EPAD MOSFETs. (The suffix “xx” denotes threshold voltage in 0.0 V steps, for example, xx=08 denotes 0.8V). The ALD110800/ALD110900 (quad/dual) are EPAD MOSFETs in which the individual threshold voltage of each MOSFET is fixed at zero. The thresh- old voltage is defined as Ids =1uA @ Vds=0.1V when the gate voltage Vgs = 0.0V. Zero threshold devices operate in the enhancement region when operated above threshold voltage and current level (Vgs> ...

Page 2

... Vgs(th). RDS(ON) AT VGS=GROUND Several of the EPAD MOSFETs produce a fixed resistance when their gate is grounded. For ALD110800, the drain current at Vds = 0. 1uA at Vgs=0.0V. Thus just by grounding the gate of the ALD110800, a resistor with Rds(on)=~100KOhm is produced. When an ALD114804 gate is grounded, the drain current Ids=18 ...

Page 3

... SUBTHRESHOLD FORWARD TRANSFER CHARACTERISTICS 100000 V GS(TH) =0. +25°C 10000 V DS =+0.1V 1000 V GS(TH) =-1.3V 100 10 1 0.1 V GS(TH) =-3.5V V GS(TH) =+0.2V 0. GATE-SOURCE VOLTAGE (V) ALD110800/ALD110900/ ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx 2500 GS(TH) =+5V 2000 GS(TH) =+4V 1500 GS(TH) =+3V 1000 GS(TH) =+2V 500 GS(TH) =+ GS(TH) = +1. GS(TH) =+0. Advanced Linear Devices DRAIN-SOURCE ON RESISTANCE vs ...

Page 4

... V GS(TH) V GS(TH GS(TH GS(TH) +2 OUTPUT VOLTAGE (V) GATE LEAKAGE CURRENT vs. AMBIENT TEMPERATURE 600 500 400 300 200 I GSS 100 0 - AMBIENT TEMPERATURE (°C) ALD110800/ALD110900/ ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx 70°C 125°C V GS(TH GS(TH GS(TH) V GS(TH) V GS(TH) V GS(TH =+5V V GS(TH =+1V V GS(TH) 1000 10000 + +1V ...

Page 5

... T = 25° +10V DS 0.9 0.6 0.3 0 DRAIN -SOURCE ON CURRENT(mA) NORMALIZED SUBTHRESHOLD CHARACTERISTICS RELATIVE GATE THRESHOLD VOLTAGE 0.3 0.2 0.1 0 -0.1 -0.2 55°C -0.3 -0.4 10000 10 1000 100 DRAIN-SOURCE CURRENT (nA) ALD110800/ALD110900/ ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx 1000 2.0 5.0 4.0 3.0 2.0 1 0.1V D 25°C 1 0.1 Advanced Linear Devices TRANSFER CHARACTERISTICS 1 25° GS(TH) = -3. +10V DS 1.2 V GS(TH) = -1.3V V GS(TH) = -0.4V V GS(TH) = 0.0V 0.8 V GS(TH) = +0.2V ...

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