ald110808 Advanced Linear Devices Inc (ALD), ald110808 Datasheet

ald110808

Manufacturer Part Number

ald110808

Description

Quad/dual N-channel Enhancement Mode Epad Matched Pair Mosfet Array

Manufacturer

Advanced Linear Devices Inc (ALD)

Datasheet

1.ALD110808.pdf (2 pages)

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Bonase Electronics (HK) Co., Limited

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ald110808APCL

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Advanced Linear Devices Inc

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ald110808PCL

Manufacturer:

Advanced Linear Devices Inc

Quantity:

135

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GENERAL DESCRIPTION

ALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/

dual N-Channel MOSFETs matched at the factory using ALD’s proven

EPAD® CMOS technology. These devices are intended for low voltage,

small signal applications.

These MOSFET devices are built on the same monolithic chip, so they

exhibit excellent temperature tracking characteristics. They are versatile

as circuit elements and are useful design component for a broad range of

analog applications. They are basic building blocks for current sources,

differential amplifier input stages, transmission gates, and multiplexer

applications. For most applications, connect V- and N/C pins to the most

negative voltage potential in the system and V+ pin to the most positive

voltage potential (or left open unused). All other pins must have voltages

within these voltage limits.

ALD110808/ALD110908 devices are built for minimum offset voltage and

differential thermal response, and they are suited for switching and ampli-

fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias

current, low input capacitance and fast switching speed are desired. As

these are MOSFET devices, they feature very large (almost infinite) cur-

rent gain in a low frequency, or near DC, operating environment.

These devices are suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result from extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 30pA at room temperature. For example, DC beta of the

device at a drain current of 3mA and input leakage current of 30pA at

25°C is = 3mA/30pA = 100,000,000.

FEATURES

• Enhancement-mode (normally off)

• Standard Gate Threshold Voltages: +0.8V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• V

• High input impedance — 10

• Positive,zero, and negative V

• DC current gain >10

• Low input and output leakage currents

ORDERING INFORMATION

* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.

Rev 1.0-0506 ©2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286

16-Pin

Plastic Dip

Package

ALD110808APC ALD110808ASC ALD110908APA ALD110908ASA

ALD110808 PC

GS(th)

match to 2mV and 10mV

0°C to +70°C

INEAR

DVANCED

EVICES,

ALD110808SC

16-Pin

SOIC

Package

Operating Temperature Range*

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

NC.

GS(th)

Ω typical

temperature coefficient

ALD110908PA

8-Pin

Plastic Dip

Package

MATCHED PAIR MOSFET ARRAY

0°C to +70°C

ALD110908SA

8Pin

SOIC

Package

www.aldinc.com

ALD110808/ALD110808A/ALD110908/ALD110908A

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Voltage choppers

• Differential amplifier input stage

• Voltage comparator

• Voltage bias circuits

• Sample and Hold

• Analog inverter

• Level shifters

• Source followers and buffers

• Current multipliers

• Analog switches / multiplexers

PIN CONFIGURATION

N/C*

*N/C pins are internally connected.

Connect to V- to reduce noise

V -

PC, SC PACKAGES

PA, SA PACKAGES

ALD110908

M 4

M 1

ALD110808

M 3

M 2

V -

GS(th)

N/C*

V -

N/C*

= +0.8V

EPAD

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ald110808 Summary of contents

Page 1

... All other pins must have voltages within these voltage limits. ALD110808/ALD110908 devices are built for minimum offset voltage and differential thermal response, and they are suited for switching and ampli- fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias current, low input capacitance and fast switching speed are desired ...

Page 2

... I DS (OFF) Gate Leakage Current1 I GSS Input Capacitance C ISS Transfer Reverse Capacitance C RSS Turn-on Delay Time t on Turn-off Delay Time t off Crosstalk Notes: 1 Consists of junction leakage currents ALD110808/ALD110808A/ALD110908/ALD110908A ° C unless otherwise specified ALD110808A / ALD110908A ALD110808/ ALD110908 Min Typ Max Min 0.78 0.80 0.82 0. -1.7 0.0 +1.6 12.0 3.0 1.4 1 ...

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