ald1108e Advanced Linear Devices Inc (ALD), ald1108e Datasheet

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ald1108e

Manufacturer Part Number
ald1108e
Description
Quad/dual Epad Precision Matched Pair N-channel Mosfet Array
Manufacturer
Advanced Linear Devices Inc (ALD)
Datasheet

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Part Number:
ald1108eSCL
Manufacturer:
Advanced Linear Devices
Quantity:
135
ORDERING INFORMATION
FEATURES
* Contact factory for industrial temperature range
© 2003 rev 11/03 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
Electrically Programmable Analog Device
CMOS Technology
Operates from 2V, 3V, 5V to 10V
Flexible basic circuit building block and design element
Very high resolution -- average e-trim voltage
resolution of 0.1mV
Wide dynamic range -- current levels from 0.1 A
to 3000 A
Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
Proven, non-volatile CMOS technology
Typical 10 years drift of less than 2mV
Usable in voltage mode or current mode
High input impedance -- 10
Very high DC current gain -- greater than 10
Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68 A
Tight matching and tracking of on-resistance
between different devices with e-trim
Wide dynamic resistance matching range
Very low input currents and leakage currents
Low cost, monolithic technology
Application-specific or in-system programming modes
Optional user software-controlled automation
Optional e-trim of any standard/custom configuration
Micropower operation
Available in standard PDIP, SOIC and hermetic CDIP packages
Suitable for matched-pair balanced circuit configuration
Suitable for both coarse and fine trimming as well as matched
MOSFET array applications
-55 C to +125 C
16-Pin
CERDIP
Package
ALD1108E DC
-55 C to +125 C
8-Pin
CERDIP
Package
ALD1110E DA
QUAD/DUAL EPAD
A
L
D
INEAR
DVANCED
EVICES,
Operating Temperature Range*
Operating Temperature Range*
I
NC.
0 C to +70 C
8-Pin
Plastic Dip
Package
ALD1110E PA
0 C to +70 C
16-Pin
Plastic Dip
Package
ALD1108E PC
12
®
PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
9
0 C to +70 C
16-Pin
SOIC
Package
ALD1108E SC
0 C to +70 C
8-Pin
SOIC
Package
ALD1110E SA
BENEFITS
PIN CONFIGURATION
PIN CONFIGURATION
Precision matched electrically after packaging
Simple, elegant single-chip user option
to trim voltage/current values
Excellent device matching characteristics with
or without additional electrical trim
Remotely and electrically trim parameters on
circuits that are physically inaccessible
Usable in environmentally sealed circuits
No mechanical moving parts -- high G-shock
tolerance
Improved reliability, dependability, dust and
moisture resistance
Cost and labor savings
Small footprint for high board density
applications
S
12
D
G
P
G
D
P
S
G
D
P
, V -
N4
N4
N4
N1
N1
N1
V -
12
N1
N1
N1
4
6
1
3
5
7
8
2
3
4
1
2
DC, PC, SC PACKAGE
DA, PA, SA PACKAGE
M 4
M1
v -
M 1
ALD1110E
ALD1108E
ALD1108E/ALD1110E
M 2
M 3
v +
M 2
V +
16
15
14
13
12
11
10
9
7
5
8
6
D
P
G
D
V +
G
P
S
P
D
G
V +
N2
N3
N2
34
N3
N2
N3
N2
N2
N2

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ald1108e Summary of contents

Page 1

... Suitable for both coarse and fine trimming as well as matched MOSFET array applications ORDERING INFORMATION Operating Temperature Range* - +125 +70 C 16-Pin 16-Pin CERDIP Plastic Dip Package Package ALD1108E DC ALD1108E PC Operating Temperature Range* - +125 +70 C 8-Pin 8-Pin CERDIP Plastic Dip Package Package ALD1110E DA ...

Page 2

... The ALD1108E/ALD1110E can be e-trimmed with an ALD EPAD programmer to obtain the desired voltage and current levels. Or, they can be e-trimmed as an active in-system element in a user system, via user designed interface circuitry ...

Page 3

... Initial Threshold Voltage is set at the factory EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage value. 3. Initial and Final values are the same unless deliberately changed by user. 4. These parameters apply only when Vt of one or more of the devices are to be changed by user. ALD1108E/ALD1110E - - DA, DC package ALD1108E ALD1110E Min Typ Max Min 1.2 10.0 1 ...

Page 4

... E-trim Pulse Current Ip 4 Pulse Frequency ƒ pulse ALD1108E/ALD1110E ALD1108E ALD1110E Min Typ Max Min Typ 1 400 4 10 100 -0.3 ALD1108E ALD1110E Min Typ Max Min 1.000 3.000 1.000 0.1 1 0.5 0.05 11.75 12.00 12.25 11.75 12. Advanced Linear Devices Test Max Unit Conditions 1.4 mA 10V,V ...

Page 5

... -50 - AMBIENT TEMPERATURE ( C) TRANSCONDUCTANCE vs. THRESHOLD VOLTAGE 2 + 1.5 1.0 5 0.5 1.0 1.5 2.0 THRESHOLD VOLTAGE (V) ALD1108E/ALD1110E +1 +12V +10V -1 3.0 2.0 1 100 125 4. 10V ...

Page 6

... AMBIENT TEMPERATURE ( C) TRANSCONDUCTANCE vs. AMBIENT TEMPERATURE 2.5 2.0 1.5 1.0 0.5 0 -50 - AMBIENT TEMPERATURE ( C) HIGH LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE 100 -50 - AMBIENT TEMPERATURE ( C) ALD1108E/ALD1110E 100 125 50 75 100 125 4. ...

Page 7

... +125 DS( +125 0.1 10 DRAIN SOURCE ON CURRENT ( A) ALD1108E/ALD1110E 100 - 125 10000 1000 100 50 75 100 125 + • DS(ON) 100 1000 10000 ...

Page 8

... REPRESENTATIVE UNITS -50 - AMBIENT TEMPERATURE ( C) GATE SOURCE VOLTAGE vs RESISTANCE 5.0 4.0 +125 C 3.0 +25 C 2.0 1.0 0 RESISTANCE (K ) ALD1108E/ALD1110E 50 75 100 125 DS(ON 0.0V V 5.0V DS 100 1000 10000 Advanced Linear Devices GATE LEAKAGE CURRENT vs. AMBIENT TEMPERATURE 600 500 400 ...

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