ald1103db Advanced Linear Devices Inc (ALD), ald1103db Datasheet

ald1103db

Manufacturer Part Number

ald1103db

Description

Dual N-channel And Dual P-channel Matched Mosfet Pair

Manufacturer

Advanced Linear Devices Inc (ALD)

Datasheet

1.ALD1103DB.pdf (6 pages)

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ORDERING INFORMATION

GENERAL DESCRIPTION

The ALD1103 is a monolithic dual N-channel and dual P-channel matched

transistor pair intended for a broad range of analog applications. These

enhancement-mode transistors are manufactured with Advanced Linear

Devices' enhanced ACMOS silicon gate CMOS process. It consists of an

ALD1101 N-channel MOSFET pair and an ALD1102 P-channel MOSFET

pair in one package.

The ALD1103 offers high input impedance and negative current temperature

coefficient. The transistor pair is matched for minimum offset voltage and

differential thermal response, and it is designed for precision signal

switching and amplifying applications in +2V to +12V systems where low

input bias current, low input capacitance and fast switching speed are

desired. Since these are MOSFET devices, they feature very large (almost

infinite) current gain in a low frequency, or near DC, operating environment.

When used in pairs, a dual CMOS analog switch can be constructed. In

addition, the ALD1103 is intended as a building block for differential

amplifier input stages, transmission gates, and multiplexer applications.

The ALD1103 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 50pA at room temperature. For example, DC beta of the device

at a drain current of 5mA at 25 C is = 5mA/50pA = 100,000,000.

FEATURES

• Thermal tracking between N-channel and P-channel pairs

• Low threshold voltage of 0.7V for both N-channel &

• Low input capacitance

• Low Vos -- 10mV

• High input impedance -- 10

• Low input and output leakage currents

• Negative current (I

• Enhancement mode (normally off)

• DC current gain 10

• Matched N-channel and matched P-channel in one package

* Contact factory for industrial temperature range.

P-channel MOSFETS

-55 C to +125 C

14-Pin

CERDIP

Package

ALD1103 DB

INEAR

DVANCED

EVICES,

DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR

Operating Temperature Range*

) temperature coefficient

NC.

0 C to +70 C

14-Pin

Plastic Dip

Package

ALD1103 PB

typical

0 C to +70 C

14-Pin

SOIC

ALD1103 SB

Package

APPLICATIONS

• Precision current mirrors

• Complementary push-pull linear drives

• Analog switches

• Choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog inverter

• Precision matched current sources

PIN CONFIGURATION

BLOCK DIAGRAM

N DRAIN 2 (14)

P DRAIN 2 (10)

N DRAIN 1 (1)

P DRAIN 1 (5)

GN1

DN1

GP1

SN1

DP1

SP1

DB, PB, SB PACKAGE

N GATE 1 (2)

N GATE 2 (13)

P GATE 1 (6)

P GATE 2 (9)

N SOURCE 1 (3)

SUBSTRATE (4)

N SOURCE 2 (12)

P SOURCE 2 (8)

P SOURCE 1 (7)

SUBSTRATE (11)

ALD1103

DN2

SN2

DP2

SP2

GN2

GP2

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ald1103db Summary of contents

Page 1

A DVANCED L INEAR D I EVICES, NC. DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These ...

Page 2

Drain-source voltage Gate-source voltage Power dissipation Operating temperature range Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS unless otherwise specified Channel Parameter Symbol Min Typ Gate Threshold ...

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ald1103db Advanced Linear Devices Inc (ALD), ald1103db Datasheet

ald1103db

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