ald1105db Advanced Linear Devices Inc (ALD), ald1105db Datasheet

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ald1105db

Manufacturer Part Number
ald1105db
Description
Dual N-channel And Dual P-channel Matched Pair Mosfet
Manufacturer
Advanced Linear Devices Inc (ALD)
Datasheet
FEATURES
• Thermal tracking between N-channel and P-channel pairs
• Low threshold voltage of 0.7V for both N-channel &
• Low input capacitance
• Low Vos -- 10mV
• High input impedance -- 10
• Low input and output leakage currents
• Negative current (I
• Enhancement mode (normally off)
• DC current gain 10
• Matched N-channel pair and matched P-channel pair in one package
ORDERING INFORMATION
GENERAL DESCRIPTION
The ALD1105 is a monolithic dual N-channel and dual P-channel
complementary matched transistor pair intended for a broad range of
analog applications.
manufactured with Advanced Linear Devices' enhanced ACMOS silicon
gate CMOS process. It consists of an ALD1116 N-channel MOSFET pair
and an ALD1117 P-channel MOSFET pair in one package. The ALD1105
is a low drain current, low leakage current version of the ALD1103.
The ALD1105 offers high input impedance and negative current temperature
coefficient. The transistor pair is matched for minimum offset voltage and
differential thermal response, and it is designed for precision signal
switching and amplifying applications in +1V to +12V systems where low
input bias current, low input capacitance and fast switching speed are
desired. Since these are MOSFET devices, they feature very large (almost
infinite) current gain in a low frequency, or near DC, operating environment.
When used in complementary pairs, a dual CMOS analog switch can be
constructed. In addition, the ALD1105 is intended as a building block for
differential amplifier input stages, transmission gates, and multiplexer
applications.
The ALD1105 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the field effect
transistors result in extremely low current loss through the control gate. The
DC current gain is limited by the gate input leakage current, which is
specified at 30pA at room temperature. For example, DC beta of the device
at a drain current of 3mA at 25 C is = 3mA/30pA = 100,000,000.
* Contact factory for industrial temperature range.
© 2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
P-channel MOSFETs
-55 C to +125 C
14-Pin
CERDIP
Package
ALD1105 DB
A
L
D
INEAR
DVANCED
EVICES,
DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
DS
Operating Temperature Range*
9
I
) temperature coefficient
NC.
These enhancement-mode transistors are
0 C to +70 C
14-Pin
Plastic Dip
Package
ALD1105 PB
13
typical
0 C to +70 C
14-Pin
SOIC
Package
ALD1105 SB
APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Discrete Analog switches
• Analog signal Choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog current inverter
• Precision matched current sources
PIN CONFIGURATION
BLOCK DIAGRAM
N DRAIN 2 (14)
P DRAIN 2 (10)
N DRAIN 1 (1)
P DRAIN 1 (5)
DN1
GN1
DP1
GP1
SN1
SP1
V
-
4
1
2
3
5
6
7
DB, PB, SB PACKAGE
N GATE 1 (2)
N GATE 2 (13)
P GATE 1 (6)
P GATE 2 (9)
N SOURCE 1 (3)
SUBSTRATE (4)
N SOURCE 2 (12)
SUBSTRATE (11)
P SOURCE 2 (8)
P SOURCE 1 (7)
11
10
14
13
12
9
8
ALD1105
DN2
SN2
DP2
GP2
SP2
GN2
V
+

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ald1105db Summary of contents

Page 1

A DVANCED L INEAR D I EVICES, NC. DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIPTION The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. ...

Page 2

ABSOLUTE MAXIMUM RATINGS Drain-source voltage Gate-source voltage Power dissipation Operating temperature range Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS unless otherwise specified Channel Parameter Symbol Min ...

Page 3

P- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS - -7.5 -5.0 -2 DRAIN SOURCE VOLTAGE (V) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE 1 0.5 ...

Page 4

N- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS DRAIN SOURCE VOLTAGE (V) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE ...

Page 5

CURRENT SOURCE MIRROR + SET SET Channel MOSFET Channel MOSFET 3 4 DIFFERENTIAL AMPLIFIER V + ...

Page 6

N- CHANNEL CURRENT SOURCE I SOURCE SOURCE SET R SET Channel MOSFET SOURCE ...

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