mtc2103bj4 Cystech Electonics Corp., mtc2103bj4 Datasheet - Page 5

• Manufacturer Part Number: mtc2103bj4
• Description: P-channel Enhancement Mode Power Mosfet
• Manufacturer: Cystech Electonics Corp.

Characteristic Curves(Cont.)
MTC2103BJ4
0.001
0.01
0.1
0.01
1
10
10
0
100
2
0.1
8
6
4
10
0.1
1
0
I = 8A
Duty Cycle = 0.5
-4
D
R = 90°C/ W
S ingle Pulse
R
V = 10V
T = 25°C
0.2
0.1
θ
0.02
0.01
0.05
DS (ON)
JA
GS
A
Maximum S afe Operating Area
Gate Charge Characteristics
Limit
Q - Gate Charge( nC )
g
S ingle Pulse
4
10
V - Drain-S ource Voltage( V )
DS
-3
1
V = 5V
DC
DS
8
10s
Transient Thermal Response Curve
10
15V
1s
100ms
CYStech Electronics Corp.
10ms
-2
10V
10
12
1ms
10
100
t ,Time (sec)
μ
-1
1
s
16
100
1
1500
1350
1200
1050
10
900
750
600
450
300
150
20
10
50
30
40
0.001
0
0
0
1.Duty Cycle,D =
2.R =90°C/ W
3.T - T = P * R (t)
4.R (t)=r(t) + R
Notes
θ
V - Drain-S ource Voltage( V )
θ
J
S ingle Pulse Maximum Power Dissipation
JA
JA
DS
0.01
Capacitance Characteristics
P
5
A
DM
100
:
t1
θ
θ
t2
JA
JA
t1
t2
10
0.1
Coss
Crss
Ciss
15
1000
1
R = 90°C/ W
S ingle Pulse
T = 25°C
CYStek Product Specification
θ
A
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 5/11
JA
20
10
f = 1MHz
V = 0 V
GS
25
100
1000
30