mtc2103bj4 Cystech Electonics Corp., mtc2103bj4 Datasheet - Page 7

• Manufacturer Part Number: mtc2103bj4
• Description: P-channel Enhancement Mode Power Mosfet
• Manufacturer: Cystech Electonics Corp.

Characteristic Curves(Cont.)
MTC2103BJ4
0.001
0.01
0.1
0.01
100
10
0.1
1
0.0001
1
10
0.1
8
6
4
2
0
0
S INGLE PULS E
V = -10V
R = 90 C /W
T = 25 C
D=0.5
R
GS
θ
I = -6A
A
0.05
D
JA
0.02
0.01
DS (ON)
0.2
0.1
Limit
°
SINGLE PULSE
°
2
0.001
Maximum S afe Operating Area
G ate C harge C haracteristics
Transient Thermal Response Curve
Q ,G ate C harge( nC )
4
g
-V ,Drain-S ource Voltage( V )
1
DS
0.01
6
V = -5V
DS
CYStech Electronics Corp.
8
t1 , Time( ms )
-10V
0.1
10
-15V
10
100 s
μ
12
1
100
P(pk)
10
R
R
Duty Cycle,D= t / t
Tj - T = P R
1600
1200
1000
1400
800
400
200
600
JA
JA
0
t1
(t)= r(t) R
= 90 C/W
25
20
15
10
30
A
5
0
t2
0.01
0
100
JA
JA
1
(t)
5
2
S ingle Pulse Maximum Power Dissipation
0.1
-V Drain-S ource Voltage( V )
S ingle Pulse Time( sec )
C apacitance C haracteristics
DS
1000
10
C iss
C oss
C rss
1
15
CYStek Product Specification
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 7/11
10
20
S INGLE PULS E
R = 90 C /W
T = 25 C
θ
A
JA
°
°
25
f = 1MHZ
V = 0V
100
G S
30
300