2sa1029ctz Renesas Electronics Corporation., 2sa1029ctz Datasheet - Page 2

• Manufacturer Part Number: 2sa1029ctz
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC458 (K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Turn on time
Turn off time
Storage time
Note:
B
100 to 200
2
1. The 2SC458 (K) is grouped by h
C
160 to 320
D
250 to 500
Symbol
V
V
V
I
I
h
V
V
f
Cob
t
t
t
CBO
EBO
T
on
off
stg
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
*
1
Min
30
30
5
—
—
100
—
—
100
—
—
—
—
FE
as follows.
Symbol
V
V
V
I
I
P
Tj
Tstg
Typ
—
—
—
—
—
—
—
—
—
—
80
300
260
C
E
CBO
CEO
EBO
C
Max
—
—
—
0.5
1.0
500
0.4
1.0
—
4
—
—
—
Unit
V
V
V
V
V
MHz
pF
ns
ns
ns
A
A
Ratings
30
30
5
100
–100
200
150
–55 to +150
Test conditions
I
I
I
V
V
V
I
I
V
V
I
V
I
V
C
C
E
C
C
C
C
CB
EB
CE
CE
CB
CC
CC
= 10 A, I
= 10 A, I
= 1 mA, R
= 10 mA, I
= 10 mA, I
= 10 I
= I
= 18 V, I
= 4 V, I
= 1 V, I
= 10 V, I
= 10 V, I
= 10 V
= 5 V
B1
= –I
B1
= –10 I
C
C
B2
C
E
E
Unit
V
V
V
mA
mA
mW
C
E
= 0
= 10 mA
BE
B
B
C
C
= 20 mA,
= 0
= 0
= 0
= 0, f = 1 MHz
= 10 mA
= 1 mA
= 1 mA
=
B2
= 10 mA,