2sa1298 TOSHIBA Semiconductor CORPORATION, 2sa1298 Datasheet - Page 2

• Manufacturer Part Number: 2sa1298
• Description: Toshiba Transistor Silicon Pnp Epitaxial
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
FE (1)
Characteristics
classification O: 100~200, Y: 160~320
(Ta = = = = 25°C)
V
V
V
Symbol
(BR) CEO
(BR) EBO
h
h
CE (sat)
I
I
FE (1)
FE (2)
V
CBO
C
EBO
f
BE
T
ob
(Note)
V
V
I
I
V
V
I
V
V
V
C
E
C
CB
EB
CE
CE
CE
CE
CB
= -0.1 mA, I
= -10 mA, I
= -500 mA, I
= -50 V, I
= -30 V, I
= -1 V, I
= -1 V, I
= -1 V, I
= -5 V, I
= -10 V, I
2
Test Condition
C
C
C
C
B
C
E
E
C
= -100 mA
= -800 mA
= -10 mA
= -10 mA
B
= 0
= 0
= 0
= 0, f = 1 MHz
= 0
= -20 mA
-0.5
Min
-25
100
¾
¾
-5
40
¾
¾
¾
Typ.
120
13
¾
¾
¾
¾
¾
¾
¾
¾
2003-03-27
2SA1298
-0.1
-0.1
-0.4
-0.8
Max
320
¾
¾
¾
¾
¾
MHz
Unit
mA
mA
pF
V
V
V
V