2sa124207 TOSHIBA Semiconductor CORPORATION, 2sa124207 Datasheet
2sa124207
Manufacturer Part Number
2sa124207
Description
Strobe Flash Applications Medium Power Amplifier Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SA124207.pdf
(4 pages)
Strobe Flash Applications
Medium Power Amplifier Applications
•
•
•
Absolute Maximum Ratings
Excellent h
: h
: h
Low collector saturation voltage
: V
High power dissipation
: P
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of
FE (1)
FE (2)
C
CE (sat)
= 10 W (Tc = 25°C), P
= 100 to 320 (V
= 70 (min) (V
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Characteristics
= −1.0 V (max) (I
FE
linearity
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
DC
Pulsed
Ta = 25°C
Tc = 25°C
CE
CE
= −2 V, I
(Note 1)
C
= −2 V, I
C
= 1.0 W (Ta = 25°C)
= −4 A, I
C
(Ta = 25°C)
C
= −4 A)
Symbol
V
V
V
= −0.5 A)
B
T
I
P
CBO
CEO
EBO
I
CP
I
T
stg
C
B
C
= −0.1 A)
j
2SA1242
−55 to 150
Rating
−0.5
−35
−20
150
1.0
−8
−5
−8
10
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-7B1A
2-7J1A
2006-11-09
―
―
―
―
2SA1242
Unit: mm
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2sa124207 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications • Excellent h linearity 100 to 320 (V = − ( (min) (V ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note 3: h classification O: 100 to 200, Y: 160 to 320 ...
Page 3
I – −8 −120 Common emitter −150 Tc = 25°C −100 −6 −70 −50 −4 −30 − −10 mA − −2 −4 −6 −8 Collector-emitter voltage – I ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...