2sa1121sdtl-e Renesas Electronics Corporation., 2sa1121sdtl-e Datasheet - Page 3

• Manufacturer Part Number: 2sa1121sdtl-e
• Description: Silicon Pnp Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SA1121
Main Characteristics
Rev.2.00 Aug 10, 2005 page 3 of 4
–500
–400
–300
–200
–100
150
100
150
100
50
50
0
0
0
Maximum Collector Dissipation Curve
–2
Collector to Emitter Voltage V
Typical Output Characteristics (2)
Ambient Temperature Ta (°C)
V
DC Current Transfer Ratio vs.
CE
Collector Current I
–5
= –3 V
–2
–7
–6
–5
–4
Collector Current
I
–10 –20
B
–3
50
= 0
–2
–4
–50 –100
–6
–1 mA
100
C
(mA)
–200
–8
CE
150
–500
(V)
–10
–100
–1.0
–0.3
–80
–60
–40
–20
–30
–10
240
200
160
120
–3
80
40
0
Base to Emitter Voltage V
0
Typical Transfer Characteristics
–5
Collector to Emitter Voltage V
0
Typical Output Characteristics (1)
V
Gain Bandwidth Product vs.
–10
–0.2 –0.4
CE
Collector Current I
–2
= –3 V
–20
Collector Current
–4
–0.6
–50
–0.2
–0.1 mA
I
B
–6
–100
–0.8
= 0
C
BE
(mA)
–200
–1.0
–8
(V)
CE
(V)
–500
–10