2sa1575

Manufacturer Part Number2sa1575
DescriptionPnp / Npn Epitaxial Planar Silicon Darlington Transistors
ManufacturerSanyo Semiconductor Corporation
2sa1575 datasheet
 
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Ordering number : EN3171A
2SA1575 / 2SC4080
Features
High f T .
High breakdown voltage.
Small reverse transfer capacitance and excellent high-frequency characteristic.
Adoption of FBET process.
Specifications
( ) : 2SA1575
Absolute Maximum Ratings at Ta=25 C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics at Ta=25 C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Marking : 2SA1575 : AF / 2SC4080 : CI
* : The 2SA1575 / 2SC4080 are classified by 10mA h FE as follows :
Rank
C
D
h FE
40 to 80
60 to 120
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SA1575 / 2SC4080
SANYO Semiconductors
PNP / NPN Epitaxial Planar Silicon Darlington Transistors
High-Frequency Amplifier,
Wide-Band Amplifier Applications
Symbol
Conditions
V CBO
V CEO
V EBO
I C
I CP
P C
Mounted on a ceramic board (250mm
Tj
Tstg
Symbol
Conditions
I CBO
V CB =(--)150V, I E =0A
I EBO
V EB =(--)2V, I C =0A
h FE 1
V CE =(--)10V, I C =(--)10mA
h FE 2
V CE =(--)10V, I C =(--)60mA
f T
V CE =(--)30V, I C =(--)30mA
Cob
V CB =(--)30V, f=1MHz
Cre
V CB =(--)30V, f=1MHz
E
F
100 to 200
160 to 320
83006AA MS IM TC-00000151 / 72098HA (KT) / 7139MO, TS
DATA SHEET
Ratings
(- -)200
(- -)200
(- -)4
(- -)100
(- -)200
500
2
0.8mm)
1.3
150
--55 to +150
Ratings
min
typ
max
(--)0.1
(--)1.0
40*
320*
20
400
(2.3)1.8
(1.7)1.4
Continued on next page.
No.3171-1/4
Unit
V
V
V
mA
mA
mW
W
C
C
Unit
A
A
MHz
pF
pF

2sa1575 Summary of contents

  • Page 1

    ... Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Marking : 2SA1575 : AF / 2SC4080 : The 2SA1575 / 2SC4080 are classified by 10mA follows : Rank 120 Any and all SANYO Semiconductor products described or contained herein do not have specifications ...

  • Page 2

    ... Collector-to-Emitter Voltage 2SA1575 / 2SC4080 Symbol Conditions V CE (sat =(--)20mA =(--)2mA V BE (sat =(--)20mA =(--)2mA V (BR)CBO I C =(--) =0A V (BR)CEO I C =(--)1mA (BR)EBO I E =(- -)100 =0A 1.5 0 ...

  • Page 3

    ... Collector Current (sat 1 0 1.0 10 Collector Current 1.4 2SA1575 / 2SC4080 1.3 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature 2SA1575 / 2SC4080 120 2SA1575 --10V 100 1.0 1.2 0 ITR03481 3 2SA1575 --10V ...

  • Page 4

    ... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. 2SA1575 / 2SC4080 PS No.3171-4/4 ...