2sa1575 Sanyo Semiconductor Corporation, 2sa1575 Datasheet

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2sa1575

Manufacturer Part Number
2sa1575
Description
Pnp / Npn Epitaxial Planar Silicon Darlington Transistors
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : EN3171A
2SA1575 / 2SC4080
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : 2SA1575 : AF / 2SC4080 : CI
* : The 2SA1575 / 2SC4080 are classified by 10mA h FE as follows :
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
High f T .
High breakdown voltage.
Small reverse transfer capacitance and excellent high-frequency characteristic.
Adoption of FBET process.
Rank
h FE
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
40 to 80
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
C
( ) : 2SA1575
60 to 120
D
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
h FE 1
h FE 2
Tstg
Cob
I CP
Cre
P C
I C
Tj
f T
100 to 200
E
SANYO Semiconductors
2SA1575 / 2SC4080
Mounted on a ceramic board (250mm
V CB =(--)150V, I E =0A
V EB =(--)2V, I C =0A
V CE =(--)10V, I C =(--)10mA
V CE =(--)10V, I C =(--)60mA
V CE =(--)30V, I C =(--)30mA
V CB =(--)30V, f=1MHz
V CB =(--)30V, f=1MHz
160 to 320
PNP / NPN Epitaxial Planar Silicon Darlington Transistors
High-Frequency Amplifier,
Wide-Band Amplifier Applications
F
83006AA MS IM TC-00000151 / 72098HA (KT) / 7139MO, TS
Conditions
Conditions
2
0.8mm)
DATA SHEET
min
40*
20
Ratings
(2.3)1.8
(1.7)1.4
typ
Ratings
400
Continued on next page.
--55 to +150
max
(- -)200
(- -)200
(- -)100
(- -)200
(--)0.1
(--)1.0
320*
(- -)4
500
150
1.3
No.3171-1/4
Unit
mW
Unit
MHz
mA
mA
pF
pF
W
V
V
V
C
C
A
A

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2sa1575 Summary of contents

Page 1

... Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Marking : 2SA1575 : AF / 2SC4080 : The 2SA1575 / 2SC4080 are classified by 10mA follows : Rank 120 Any and all SANYO Semiconductor products described or contained herein do not have specifications ...

Page 2

... Collector-to-Emitter Voltage 2SA1575 / 2SC4080 Symbol Conditions V CE (sat =(--)20mA =(--)2mA V BE (sat =(--)20mA =(--)2mA V (BR)CBO I C =(--) =0A V (BR)CEO I C =(--)1mA (BR)EBO I E =(- -)100 =0A 1.5 0 ...

Page 3

... Collector Current (sat 1 0 1.0 10 Collector Current 1.4 2SA1575 / 2SC4080 1.3 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature 2SA1575 / 2SC4080 120 2SA1575 --10V 100 1.0 1.2 0 ITR03481 3 2SA1575 --10V ...

Page 4

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. 2SA1575 / 2SC4080 PS No.3171-4/4 ...

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