2sa1847 Renesas Electronics Corporation., 2sa1847 Datasheet - Page 2

• Manufacturer Part Number: 2sa1847
• Description: Pnp Silicon Epitaxial Transistor For High-speed Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (Ta = 25° ° ° ° C)
* Pulse test PW ≤ 350 µ s, duty cycle ≤ 2%
h
2
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Turn-on time
Storage time
Fall time
FE
Marking
Electrode Connection
1. Base
2. Collector
3. Emitter
CLASSIFICATION
h
FE
PACKAGE DRAWING (UNIT: mm)
Parameter
100 to 200
M
V
V
V
V
Symbol
h
h
h
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
I
I
I
I
I
CEX1
CEX2
C
t
CBO
CER
EBO
FE1
FE2
FE3
t
f
stg
t
on
T
ob
f
150 to 300
*
*
*
*
*
*
*
L
V
V
Ta = 125°C
V
V
Ta = 125°C
V
V
V
V
I
I
I
I
V
V
I
I
R
C
C
C
C
C
B1
CB
CE
CE
CE
EB
CE
CE
CE
CE
CB
L
= −6.0 A, I
= −8.0 A, I
= −6.0 A, I
= −8.0 A, I
= −6.0 A
= −I
= 8.3 Ω, V
= −100 V, I
= −100 V, R
= −100 V, V
= −100 V, V
= −5.0 V, I
= −2.0 V, I
= −2.0 V, I
= −2.0 V, I
= −10 V, I
= −10 V, I
Data Sheet D15593EJ2V0DS
B2
= −0.3 A
B
B
B
B
200 to 400
CC
C
E
Conditions
= −0.3 A
= −0.4 A
= −0.3 A
= −0.4 A
C
C
C
C
E
= 0, f = 1 MHz
= −0.5 A
TAPING SPECIFICATION
BE(off)
BE(off)
= −50 V
EB
= 0
= −0.5 A
= −2.0 A
= −6.0 A
= 0
K
= 50 Ω
= 1.5 V
= 1.5 V
MIN.
100
100
60
TYP.
150
250
MAX.
−1.0
−1.0
−0.3
−0.5
−1.2
−1.5
−10
−10
−10
400
0.3
1.5
0.4
MHz
Unit
mA
mA
µ A
µ A
µ A
pF
µ s
µ s
µ s
V
V
V
V
2SA1847
−
−
−