2sc5376f TOSHIBA Semiconductor CORPORATION, 2sc5376f Datasheet - Page 2

• Manufacturer Part Number: 2sc5376f
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Collector-emitter on resistance
Switching time
Note: h
FE
Classification
Characteristics
Turn-on time
Storage time
Falll time
A: 300 to 600, B: 500 to 1000
(Ta = = = = 25°C)
V
V
CE (sat) (1)
CE (sat) (2)
V
Symbol
BE (sat)
I
I
CBO
EBO
h
C
R
t
t
stg
f
FE
on
t
T
ob
on
f
(Note)
V
V
V
I
I
I
V
V
I
Duty Cycle < = 2%
IB1 = -IB2 = 5 mA
0 V
C
C
C
B
CB
EB
CE
CE
CB
= 10 mA, I
= 200 mA, I
= 200 mA, I
= 1 mA, V
= 5 V, I
10 ms
2
= 15 V, I
= 2 V, I
= 2 V, I
= 10 V, I
INPUT
Test Condition
C
C
C
in
B
E
E
= 0
= 10 mA
= 10 mA
B
B
= 1 V
= 0.5 mA
= 0
= 0, f = 1 MHz
= 10 mA
= 10 mA
300 W
rms
V
BB
, f = 1 kHz
OUTPUT
= -3 V
V
CC
= 6 V
300
Min
80
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Typ.
0.87
110
130
170
4.2
0.9
15
85
40
¾
¾
¾
2SC5376F
2002-01-16
1000
Max
250
0.1
0.1
1.2
30
¾
¾
¾
¾
¾
¾
MHz
Unit
mV
mV
mA
mA
pF
ns
ns
ns
W
V