2sc5179-t2 Renesas Electronics Corporation., 2sc5179-t2 Datasheet

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2sc5179-t2

Manufacturer Part Number
2sc5179-t2
Description
Npn Epitaxial Silicon Transistor In Small Mini-mold Package For Low-noise Microwave Amplification
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. P12103EJ2V0DS00 (2nd edition)
(Previous No. TC-2476)
Date Published November 1996 N
Printed in Japan
FEATURES
• Low current consumption and high gain
• Small Mini-Mold package
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
2SC5179-T1
2SC5179-T2
|S
|S
EIAJ: SC-70
PART
NUMBER
* Contact your NEC sales representatives to order samples for
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE
21e
21e
evaluation (available in batches of 50).
|
|
2
2
= 9 dB TYP. @ V
= 8.5 dB TYP. @ V
3000 units/reel
QUANTITY
FOR LOW-NOISE MICROWAVE AMPLIFICATION
CE
CE
= 2 V, I
= 1 V, I
V
V
V
T
Embossed tape, 8 mm wide, pin
No. 3 (Collector) facing
the perforations
Embossed tape, 8 mm wide, pins
No. 1 (Emitter) and No. 2 (Base)
facing the perforations
P
CBO
CEO
EBO
I
T
C
stg
T
j
C
= 7 mA, f = 2 GHz
C
= 5 mA, f = 2 GHz
DATA SHEET
ARRANGEMENT
–65 to +150
A
= 25 C)
150
10
30
5
3
2
mW
mA
V
V
V
C
C
SILICON TRANSISTOR
PACKAGE DIMENSIONS
PIN CONNECTIONS
(Units: mm)
2SC5179
1. Emitter
2. Base
3. Collector
2
1
1.25±0.1
2.1±0.1
©
Marking
3
1994

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2sc5179-t2 Summary of contents

Page 1

... Small Mini-Mold package EIAJ: SC-70 ORDERING INFORMATION PART QUANTITY NUMBER 2SC5179-T1 3000 units/reel 2SC5179-T2 * Contact your NEC sales representatives to order samples for evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation ...

Page 2

... GHz 8.5 12 GHz 0.4 0 350 s, duty cycle 2 %, pulsed 2SC5179 CONDITIONS = mA GHz mA GHz mA GHz mA GHz mA GHz mA GHz C *2 ...

Page 3

... 100 INSERTION POWER GAIN vs. COLLECTOR CURRENT 2SC5179 0.5 1.0 – Base to Emitter Voltage – CURRENT GAIN vs. COLLECTOR CURRENT 100 I – Collector Current – ...

Page 4

... NOISE FIGURE vs. COLLECTOR CURRENT GHz – Collector Current – FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.8 0.6 0 0.2 10 0.0 2.0 V – Collector to Base Voltage – 2SC5179 MHz 4.0 6.0 8.0 10.0 ...

Page 5

... S22 MAG ANG 0.994 –4.0 0.992 –8.1 0.980 –11.5 0.959 –15.5 0.949 –18.8 0.923 –22.1 0.901 –25.6 0.875 –28.4 0.851 –31.2 0.832 –34.1 0.806 –36.4 0.781 –38.8 0.761 – ...

Page 6

... S22 MAG ANG 0.957 –9.0 0.911 –17.3 0.847 –23.7 0.776 –28.9 0.723 –32.6 0.664 –35.4 0.618 –37.9 0.579 –39.3 0.547 –40.8 0.522 –41.8 0.499 –42.8 0.479 –43.5 0.459 – ...

Page 7

... S22 MAG ANG 0.996 –3.6 0.993 –7.4 0.983 –10.5 0.964 –14.4 0.955 –17.4 0.932 –20.4 0.913 –23.8 0.888 26.5 0.865 –29.2 0.847 –32.0 0.822 –34.1 0.803 –36.4 0.782 – ...

Page 8

... S22 MAG ANG 0.964 –8.1 0.926 –15.6 0.868 –21.4 0.801 –26.5 0.752 –30.0 0.696 –32.3 0.650 –34.9 0.612 –36.2 0.581 –37.6 0.557 –38.5 0.534 –39.7 0.515 –40.2 0.495 – ...

Page 9

... [MEMO] 2SC5179 9 ...

Page 10

... [MEMO] 10 2SC5179 ...

Page 11

... [MEMO] 2SC5179 11 ...

Page 12

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 10 2SC5179 M4 96.5 ...

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