2sc5773jr-tl-e Renesas Electronics Corporation., 2sc5773jr-tl-e Datasheet - Page 2
2sc5773jr-tl-e
Manufacturer Part Number
2sc5773jr-tl-e
Description
Transistors Silicon Npn Epitaxial Uhf / Vhf Wide Band Amplifier Uhf / Vhf Wide Band Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC5773JR-TL-E.pdf
(11 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5773JR-TL-E
Manufacturer:
HITACHI/日立
Quantity:
20 000
2SC5773
Electrical Characteristics
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Reverse transfer capacitance
Gain bandwidth product
S
Power gain
Noise figure
Rev.3.00 May 09, 2006 page 2 of 10
21
parameter
Item
Symbol
V
|S
(BR)CBO
Cob
I
I
I
Cre
h
PG
NF
CBO
CEO
EBO
f
21
FE
T
|
2
Min
15
—
—
—
80
—
—
—
—
8
9
1.25
0.98
10.8
11.9
Typ
120
1.1
11
—
—
—
—
Max
160
1.8
1.9
10
—
—
—
—
—
1
1
Unit
GHz
mA
pF
pF
dB
dB
dB
V
A
A
I
V
V
V
V
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 GHz
V
f = 1 GHz
V
f = 900 MHz
V
f = 900 MHz
C
CB
CE
EB
CE
CB
CB
CE
CE
CE
CE
= 10 A, I
= 1.5 V, I
= 12 V, I
= 6 V, R
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
Test Conditions
C
E
E
C
C
C
C
E
BE
E
= 0
= 0
= 50 mA
= 50 mA
= 50 mA
= 50 mA
= 5 mA
C
= 0
= 0
= 0
=
(Ta = 25°C)