2sc5886 TOSHIBA Semiconductor CORPORATION, 2sc5886 Datasheet

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2sc5886

Manufacturer Part Number
2sc5886
Description
Toshiba Transistor Silicon Npn Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High-Speed Swtching Applications
DC-DC Converter Applications
Absolute Maximum Ratings
High DC current gain: h
Low collector-emitter saturation: V
High-speed switching: t
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
f
Ta = 25°C
Tc = 25°C
FE
= 55 ns (typ.)
Pulse
TOSHIBA Transistor Silicon NPN Epitaxial Type
DC
= 400 to 1000 (I
CE (sat)
(Ta = 25°C)
Symbol
V
V
V
V
T
I
P
CBO
CEO
EBO
CEX
I
CP
I
T
stg
C
B
C
2SC5886
j
= 0.22 V (max)
C
= 0.5 A)
−55 to 150
Rating
100
150
0.5
80
50
10
20
7
5
1
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
2006-11-10
2SC5886
Unit: mm

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2sc5886 Summary of contents

Page 1

... C = 0.22 V (max) CE (sat) (Ta = 25°C) Symbol Rating Unit V 100 V CBO V 80 CEX CEO EBO 0 150 °C j −55 to 150 T °C stg 1 2SC5886 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 2006-11-10 ...

Page 2

... stg = 32 mA − μ Input Duty cycle < 2SC5886 Min Typ. Max ⎯ ⎯ 100 ⎯ ⎯ 100 ⎯ 50 ⎯ 400 1000 ⎯ 200 ⎯ ⎯ 0.22 ⎯ ⎯ 1.10 ⎯ 63 ⎯ ...

Page 3

... Tc = −55°C 1 0.5 0.3 25°C 0.1 0.05 0.03 0. 0.001 0.003 10 Common emitter 25° 0 0.3 0 0.05 0.03 0.01 1.5 0.001 0.003 3 2SC5886 h – 100°C 25°C −55°C 0.01 0.03 0.1 0 Collector current I ( – (sat) C 100°C 0.01 0.03 0.1 0 Collector current I ( – ...

Page 4

... Single pulse Tc = 25°C 0.03 Curves must be derated linearly with increase in temperature 0.01 0 Collector-emitter voltage V CEO r – (j- 25°C Infinite heat sink Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.03 0.1 0.3 1 Pulse width t ( μs* 100 (V) 4 2SC5886 3 10 2006-11-10 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SC5886 20070701-EN 2006-11-10 ...

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