2sc5617 Renesas Electronics Corporation., 2sc5617 Datasheet - Page 2

• Manufacturer Part Number: 2sc5617
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
75 to 110
EB
Y1
Symbol
h
C
S
FE
I
I
re
NF
95 to 140
CBO
EBO
f
21e
T
Note 2
Note 1
350 s, Duty Cycle
FB
Y2
2
A
V
V
V
V
V
V
Z
V
= +25 C)
Data Sheet PU10082EJ02V0DS
S
CB
EB
CE
CE
CE
CE
CB
= Z
= 5 V, I
= 1 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
opt
Test Conditions
C
E
C
C
C
C
E
= 0 mA
= 0 mA
= 10 mA
= 10 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 3 mA, f = 2 GHz,
= 0 mA, f = 1 MHz
2%
MIN.
7.0
75
–
–
–
–
–
TYP.
12.0
8.5
1.5
0.4
–
–
–
MAX.
100
100
140
2.5
0.7
–
–
2SC5617
GHz
Unit
nA
nA
dB
dB
pF
–