2sc5695 TOSHIBA Semiconductor CORPORATION, 2sc5695 Datasheet

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2sc5695

Manufacturer Part Number
2sc5695
Description
Toshiba Transistor Silicon Npn Triple Diffused Mesa Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Horizontal Deflection Output for High Resolution Display,
Color TV
·
·
·
Maximum Ratings
Electrical Characteristics
High voltage: V
Low saturation voltage: V
High speed: t
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Characteristics
Characteristics
f
(2) = 0.1 µs (typ.)
CBO
Storage time
Fall time
Storage time
Fall time
DC
Pulse
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
= 1500 V
(Tc = = = = 25°C)
CE (sat)
(Tc = = = = 25°C)
= 3 V (max)
Symbol
V
V
V
T
I
P
CBO
CEO
EBO
V
I
CP
I
T
stg
C
B
V
V
C
Symbol
(BR) CEO
h
h
h
2SC5695
j
t
t
CE (sat)
BE (sat)
stg
stg
I
I
FE
FE
FE
t
t
CBO
C
EBO
f
f
f
(1)
(2)
T
ob
(1)
(2)
(1)
(2)
(3)
-55~150
V
V
I
V
V
V
I
I
V
V
I
f
I
f
C
C
C
CP
H
CP
H
Rating
1500
CB
EB
CE
CE
CE
CE
CB
700
200
150
22
44
11
= 10 mA, I
= 17 A, I
= 17 A, I
= 64 kHz
= 100 kHz
5
1
= 8 A, I
= 8 A, I
= 5 V, I
= 1500 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 10 V, I
= 10 V, I
Test Condition
B
B
B1 (end)
B1 (end)
C
C
C
C
B
= 4.25 A
= 4.25 A
C
E
= 0
= 2 A
= 10 A
= 17 A
= 0
= 0, f = 1 MHz
= 0.1 A
E
Unit
°C
°C
W
V
V
V
A
A
= 0
= 1.1 A,
= 1.4 A,
Weight: 9.75 g (typ.)
JEDEC
JEITA
TOSHIBA
700
Min
4.8
20
¾
¾
¾
¾
¾
¾
¾
¾
¾
8
Typ.
0.15
280
1.0
2.5
1.6
0.1
¾
¾
¾
¾
¾
¾
¾
2
2-21F2A
2001-10-29
2SC5695
Max
0.15
8.3
1.5
0.3
1.8
10
¾
50
17
¾
¾
1
3
3
Unit: mm
MHz
Unit
mA
mA
pF
ms
¾
V
V
V

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2sc5695 Summary of contents

Page 1

... (end kHz (2) stg = (end) = 100 kHz ( 2SC5695 JEDEC ― JEITA ― TOSHIBA 2-21F2A Weight: 9.75 g (typ.) Min Typ. Max = 0 ¾ ¾ ¾ ¾ 10 700 ¾ ¾ ...

Page 2

... Collector-emitter voltage V CE (V) h – 300 100 Tc = 100° - Common emitter 0.5 0.01 0.03 0.1 0 Collector current I ( – Common emitter 100°C - 0.2 0.4 0.6 0.8 Base-emitter voltage V (V) BE 2.5 2 0.8 0.6 0 1.2 2 2SC5695 2001-10-29 ...

Page 3

... Common emitter Tc = 25° 0.5 0.3 0.1 0.05 0 Common emitter Tc = 100° 0.5 0.3 16 0.1 0.05 4 0.2 3 2SC5695 V – (sat 100 Collector current I C (A) V – (sat 100 ...

Page 4

... Tc = 25°C (infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse 100 Pulse width t (s) w 250 10 ms* 200 150 100 1000 4 2SC5695 100 1000 P – Infinite heat sink 50 75 100 125 150 Case temperature Tc (°C) 2001-10-29 ...

Page 5

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2SC5695 000707EAA 2001-10-29 ...

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