2sc6041 TOSHIBA Semiconductor CORPORATION, 2sc6041 Datasheet - Page 2

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2sc6041

Manufacturer Part Number
2sc6041
Description
Toshiba Transistor Silicon Npn Triple-diffused Mesa Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Electrical Characteristics
Collector cutoff current
Emitter cutoff current
Emitter–base breakdown voltage
DC current gain
Collector–emitter saturation voltage
Base–emitter saturation voltage
Transition frequency
Collector output capacitance
Switching time
Characteristic
Storage time
Fall time
(T
C
V
V
V
Symbol
= 25
h
h
h
(BR) EBO
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
FE (3)
CBO
C
EBO
t
f
stg
t
T
ob
f
°C
)
V
V
I
V
V
V
I
I
V
V
I
f
E
C
C
CP
H
CB
EB
CE
CE
CE
CE
CB
= 1 mA, I
= 12 A, I
= 12 A, I
= 32 kHz
= 6 A, I
= 5 V, I
= 1700 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 10 V, I
= 10 V, I
2
B
B
B1
B
Test Condition
C
C
C
C
= 3 A
= 3 A
C
E
= 0
= 0
(end) = 0.8 A
= 2 A
= 8 A
= 12 A
= 0, f = 1 MHz
= 0.1 A
E
= 0
Min
30
5
8
5
Typ.
0.15
260
2
4
2006-06-20
2SC6041
Max
1.25
100
1.5
60
12
1
7
Unit
MHz
mA
µA
pF
µs
V
V
V

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