2sc6061 TOSHIBA Semiconductor CORPORATION, 2sc6061 Datasheet
2sc6061
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2sc6061 Summary of contents
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... Unit V 180 V CBO V 150 V CEX V 120 V CEO EBO 1000 625 mW T 150 ° −55 to 150 °C stg 1 2SC6061 Unit: mm +0.2 2.8-0.3 +0.2 1.6-0 Base 2. Emitter 3. Collector JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 0.01g (Typ 2006-11-13 ...
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... V, R stg − Output B1 Input Part No. (or abbreviation code) Lot code (month) 2 2SC6061 Min Typ. Max Unit ― ― 100 nA ― ― 100 nA 180 ― ― V 120 ― ― V 100 ― ― ...
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... Common emitter 8 Single non-repetitive pulse 6 0 0.4 IB=1mA 0 0 Common emitter Single non-repetitive pulse 0.1 0.01 0.001 2SC6061 I – ℃ − 100 °C 25 0.4 0.6 0.8 1 1.2 Base-emitter voltage V ( – (sat) C β 100 °C −55 1 0.01 0.1 1 Collector current I ...
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... Curves apply only to limited areas of thermal resistance. Single non-repetitive pulse Ta = 25°C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm 0 Pulse width t (s) w 100 ms※ μs 1 ms※ 10 s※* V CEO max 1000 (V) 4 2SC6061 2 ) 100 1000 2006-11-13 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SC6061 20070701-EN 2006-11-13 ...