2sc6061 TOSHIBA Semiconductor CORPORATION, 2sc6061 Datasheet

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2sc6061

Manufacturer Part Number
2sc6061
Description
Silicon Npn Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number:
2SC6061
Manufacturer:
toshiba
Quantity:
30 000
Part Number:
2SC6061
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
High-Speed Switching Applications
DC-DC Converter Applications
・High-DC current gain: h
・Low-collector-emitter saturation: V
・High-speed switching: t
Absolute Maximum Ratings
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (Note 1)
Base current
Collector power
dissipation (Note 2)
Junction temperature
Storage temperature range
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645 mm
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristic
f
FE
= 0.2 μs (typ)
t = 10s
Pulse
= 120 to 300 (I
DC
DC
TOSHIBA Transistor Silicon NPN Epitaxial Type
CE (sat)
(Ta = 25°C)
Symbol
V
V
V
V
T
I
P
CBO
CEX
CEO
EBO
I
CP
I
T
stg
C
B
C
j
2SC6061
C
= 0.14 V (max)
= 0.1 A)
−55 to 150
Rating
1000
180
150
120
625
150
1.0
2.0
0.1
7
1
Unit
mW
mW
°C
°C
V
V
V
V
A
A
A
2
)
Weight: 0.01g (Typ.)
JEDEC
JEITA
TOSHIBA
1. Base
2. Emitter
3. Collector
1
2
1.6-0.1
2.8-0.3
+0.2
+0.2
2-3S1A
2006-11-13
2SC6061
3
Unit: mm

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2sc6061 Summary of contents

Page 1

... Unit V 180 V CBO V 150 V CEX V 120 V CEO EBO 1000 625 mW T 150 ° −55 to 150 °C stg 1 2SC6061 Unit: mm +0.2 2.8-0.3 +0.2 1.6-0 Base 2. Emitter 3. Collector JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight: 0.01g (Typ 2006-11-13 ...

Page 2

... V, R stg − Output B1 Input Part No. (or abbreviation code) Lot code (month) 2 2SC6061 Min Typ. Max Unit ― ― 100 nA ― ― 100 nA 180 ― ― V 120 ― ― V 100 ― ― ...

Page 3

... Common emitter 8 Single non-repetitive pulse 6 0 0.4 IB=1mA 0 0 Common emitter Single non-repetitive pulse 0.1 0.01 0.001 2SC6061 I – ℃ − 100 °C 25 0.4 0.6 0.8 1 1.2 Base-emitter voltage V ( – (sat) C β 100 °C −55 1 0.01 0.1 1 Collector current I ...

Page 4

... Curves apply only to limited areas of thermal resistance. Single non-repetitive pulse Ta = 25°C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm 0 Pulse width t (s) w 100 ms※ μs 1 ms※ 10 s※* V CEO max 1000 (V) 4 2SC6061 2 ) 100 1000 2006-11-13 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SC6061 20070701-EN 2006-11-13 ...

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