hn7g01fu TOSHIBA Semiconductor CORPORATION, hn7g01fu Datasheet

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hn7g01fu

Manufacturer Part Number

hn7g01fu

Description

Toshiba Multi Chip Discrete Device

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.HN7G01FU.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

HN7G01FU

Manufacturer:

TOSHIBA

Quantity:

45 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

hn7g01fu-A

Manufacturer:

OMRON

Quantity:

15 000

Current page: 1 of 5
Download datasheet (176Kb)

Power Management Switch Application

Driver Circuit Application

Interface Circuit Application

·

·

Q1

Q2

Q1, Q2 Common Ratings

Marking

Preliminary

Q1 (transistor): 2SA1955 equivalent

Q2 (MOS-FET): 2SK1830 equivalent

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Drain-source voltage

Gate-source voltage

Drain current

Power dissipation

Junction temperature

Storage temperature range

Note 1: Total rating

(transistor)

(MOS-FET)

Characteristics

Characteristics

Characteristics

Maximum Ratings

Maximum Ratings

(Ta = = = = 25°C)

TOSHIBA Multi Chip Discrete Device

Symbol

Symbol

Symbol

HN7G01FU

V

V

V

V

V

T

CBO

CEO

P

EBO

GSS

I

I

(Note 1)

I

T

DS

stg

C

D

B

C

j

(Ta = = = = 25°C)

(Ta = = = = 25°C)

-55~150

Rating

Rating

Rating

-400

-15

-12

-50

200

125

-5

20

10

50

1

Pin Assignment

Unit

Unit

Unit

mW

mA

mA

mA

°C

°C

V

V

V

V

V

(top view)

Weight: 6.8 mg (typ.)

JEDEC

JEITA

TOSHIBA

HN7G01FU

2003-03-27

―

―

―

Unit: mm

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