2sc3841 Renesas Electronics Corporation., 2sc3841 Datasheet

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2sc3841

Manufacturer Part Number
2sc3841
Description
Uhf Oscillator And Uhf Mixer Npn Silicon Epitaxial Transistor Mini Mold
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. P10362EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
DESCRIPTION
UHF oscillators and a UHF mixer in a tuner of a TV receiver.
any change of the supply voltage and the ambient temperature.
for Hybried Integrated Circuit and other applications.
FEATURES
• High Gain Bandwidth Procuct; f
• Low Collector to Base Time Constant; C
• Low Output Capacitance; C
ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
h
Collector Cutoff Current
DC Current Gain
Collector Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Collector to Base Time Constatnt
FE
The 2SC3841 is an NPN silicon epitaxial transistor intended for use as
The device features stable oscillation and small frequency drift against
It is designed for use in small type equipments especially recommendd
Maximum Voltages and Current
Maximum Power Dissipation
Maximum Power Temperutures
Marking
Classification
Class
h
FE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
CHARACTERISTIC
T62/P *
40 to 80
T62
NPN SILICON EPITAXIAL TRANSISTOR
UHF OSCILLATOR AND UHF MIXER
ob
60 to 120
T63/Q *
= 1.5 pF MAX.
T63
T
SYMBOL
= 4.0 GHz TYP.
C
V
C
I
CE(sat)
h
C
CBO
f

FE
T
ob
r
b’b
V
V
V
I
P
T
T
C
j
stg
CBO
CEO
EBO
T
DATA SHEET
C
DATA SHEET
A
A

100 to 200
= 25
= 25
T64/R *
r
b’b
MINI MOLD
MIN.
2.5
T64
40
= 4.0 ps TYP.
 
 
C)

C)
55 to +150
TYP.
200
150
0.09
0.85
100
25
12
30
4.0
4.0
3
* Old Specification / New Specification
MAX.
10.0
200
0.1
0.5
1.5
mW
mA


V
V
V
C
C
UNIT
GHz

pF
ps
SILICON TRANSISTOR
V
A
PIN CONNECTIONS
1.
2.
3.
V
V
I
V
V
V
C
CB
CE
CE
CB
CE
= 10 mA, I
Emitter
Base
Collector
PACKAGE DIMENSIONS
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
2SC3841
TEST CONDITIONS
2
1
(Units: mm)
E
C
B
E
E
E
=
= 0
=
= 0, f = 1.0 MHz
= 5.0 mA
= 1.0 mA
2.8±0.2


1.5
5.0 mA, f = 31.9 MHz
5.0 mA
Marking
©
3
0.65
+0.1
0.15
1986

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2sc3841 Summary of contents

Page 1

... UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3841 is an NPN silicon epitaxial transistor intended for use as UHF oscillators and a UHF mixer in a tuner receiver. The device features stable oscillation and small frequency drift against any change of the supply voltage and the ambient temperature. ...

Page 2

... 0 1.0 GHz 0 1.0 MHz 0.5 2SC3841 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.6 0.7 0.8 0.9 V -Base to Emitter Voltage-V BE INSERTION GAIN vs. COLLECTOR CURRENT = -Collector Current- vs. C b'b COLLECTOR CURRENT ...

Page 3

... 1.012 0.989 0.759 0.582 0.484 0.417 45 ...

Page 4

... 1.2 GHz 0.2 GHz S 11 0.2 GHz -FREQUENCY C 12e 120 60 30 150 0 180 150 60 120 2SC3841 = 50 O 0.05 GHz 50 0.1 GHz 0.1 GHz CONDITION 1.2 GHz 0.2 GHz 0.1 GHz 0.05 GHz 0 0.05 0.11 0.15 0.2 0. ...

Page 5

... [MEMO] 2SC3841 5 ...

Page 6

... [MEMO] 6 2SC3841 ...

Page 7

... [MEMO] 2SC3841 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SC3841 M4 96. 5 ...

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