2sc3709a TOSHIBA Semiconductor CORPORATION, 2sc3709a Datasheet - Page 4

• Manufacturer Part Number: 2sc3709a
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.5
0.3
0.1
0.5
0.3
0.1
30
10
5
3
1
5
3
1
0.1
1
I C max (pulsed)*
I C max
(continuous)
*: Single nonrepetitive pulse
Curves must be derated linearly
with increase in temperature
Tc = 25°C
Collector-emitter voltage V
0.3
DC operation
Tc = 25°C
3
Tc = −55°C
Collector current I
Safe Operating Area
100
0.3
0.1
100
30
10
0.001
3
1
V
Curves should be applied in thermal limited area.
(Single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
BE (sat)
10
1
25
– I
1 ms*
0.01
C
30
C
3
Common emitter
I C /I B = 20
10 ms*
CE
(A)
V CEO max
(V)
100
10
0.1
20
Pulse width t
r
th
4
– t
1
w
w
(s)
10
50
40
30
20
10
8
6
4
2
0
0
0
0
10
(1)
(2)
Tc = 100°C
0.4
40
Base-emitter voltage V
Ambient temperature Ta (°C)
0.8
80
100
−55
I
P
C
C
– V
25
120
1.2
– Ta
(1)
(2)
(1) Tc = Ta
(2) No heat sink
BE
Infinite heat sink
1000
Common emitter
V CE = 1 V
160
1.6
BE
(V)
200
2.0
2SC3709A
2006-11-10
240
2.4