si7190dp Vishay, si7190dp Datasheet - Page 4

• Manufacturer Part Number: si7190dp
• Description: N-channel 250-v D-s Mosfet
• Manufacturer: Vishay

Si7190DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
4.0
3.5
3.0
2.5
2.0
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
T
J
= 150 °C
V
0.3
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
75
T
J
I
0.01
D
100
= 25 °C
100
0.1
0.9
10
= 250 µA
1
0.1
Limited by R
* V
Safe Operating Area, Junction-to-Ambient
125
Single Pulse
T
GS
A
= 25 °C
New Product
> minimum V
V
150
1.2
DS
1
DS(on)
- Drain-to-Source Voltage (V)
*
GS
at which R
10
0.25
0.20
0.15
0.10
0.05
100
DS(on)
80
60
40
20
0
0.001
0
100
is specified
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
0.01
BVDSS Limited
1 ms
10 ms
100 ms
DC
100 µs
1 s
10 s
V
GS
1000
5
0.1
- Gate-to-Source Voltage (V)
Time (s)
10
1
S-82585-Rev. A, 27-Oct-08
Document Number: 68985
10
T
T
I
D
J
J
15
= 25 °C
= 4.4 A
= 125 °C
100
1000
20