si7806bdn-t1-e3 Vishay, si7806bdn-t1-e3 Datasheet

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si7806bdn-t1-e3

Manufacturer Part Number
si7806bdn-t1-e3
Description
N-channel 30-v D-s Fast Switching Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7806BDN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 73081
S-60790-Rev. B, 08-May-06
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
V
DS
30
Ordering Information: Si7806BDN-T1-E3 (Lead (Pb)-free)
(V)
8
3.30 mm
D
7
D
0.0205 at V
N-Channel 30-V (D-S) Fast Switching MOSFET
0.0145 at V
6
D
PowerPAK 1212-8
Bottom View
5
r
DS(on)
D
J
a
= 150 °C)
a
GS
GS
(:)
1
= 4.5 V
= 10 V
S
2
S
a
3
S
3.30 mm
4
a
G
A
I
New Product
D
12.6
10.6
= 25 °C unless otherwise noted
Steady State
Steady State
(A)
T
T
T
T
t d 10 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• PWM Optimized
• New Low Thermal Resistance PowerPAK
• DC/DC Converters
Symbol
Symbol
T
R
R
J
Package with Low 1.07 mm Profile
- Secondary Synchronous Rectifier
- High-Side MOSFET in Synchronous Buck
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
£
Power MOSFETS
10 secs
Typical
12.6
10.1
3.2
3.8
2.0
1.9
24
65
G
N-Channel MOSFET
- 55 to 150
± 20
30
40
Steady State
D
S
Maximum
8.0
6.4
1.3
1.5
0.8
2.4
33
81
Vishay Siliconix
Si7806BDN
www.vishay.com
£
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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si7806bdn-t1-e3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7806BDN-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7806BDN Vishay Siliconix SPECIFICATIONS °C unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73081 S-60790-Rev. B, 08-May- °C J 0.8 1.0 1.2 Si7806BDN Vishay Siliconix 1400 1200 C iss 1000 800 600 C oss 400 C rss 200 − Drain-to-Source Voltage (V) ...

Page 4

... Si7806BDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0.6 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 − Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 r Limited I DS(on D(on) Limited °C A 0.1 Single Pulse BV Limited DSS 0.01 0 − ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73081. Document Number: 73081 S-60790-Rev. B, 08-May- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Si7806BDN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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