si7888dp-t1 Vishay, si7888dp-t1 Datasheet - Page 4

• Manufacturer Part Number: si7888dp-t1
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7888DP
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
I
D
J
= 250 mA
- Temperature (_C)
25
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
1
0.1
10
100
-2
r
Limited
DS(on)
I
D(on)
125
Single Pulse
T
C
Limited
V
= 25_C
Square Wave Pulse Duration (sec)
DS
150
Safe Operating Area
- Drain-to-Source Voltage (V)
1
10
-1
BV
DSS
Limited
10
1
I
DM
50
40
30
20
10
0
0.01
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
Single Pulse Power
DM
JM
- T
1
Time (sec)
t
A
1
= P
t
2
DM
Z
thJA
thJA
100
S-31727—Rev. B, 18-Aug-03
t
t
10
1
2
(t)
Document Number: 71876
= 55_C/W
100
600
600