si7401dn-t1-e3 Vishay, si7401dn-t1-e3 Datasheet

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... Bottom View Ordering Information: Si7401DN-T1 Si7401DN-T1–E3 (Lead (Pb)–free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

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... Si7401DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

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... Document Number: 71423 S-51210–Rev. B, 27-Jun- °C, unless otherwise noted 2 4 ° 0.8 1.0 1.2 Si7401DN Vishay Siliconix 5000 4000 C iss 3000 2000 1000 C oss C rss – Drain-to-Source Voltage (V) DS Capacitance 1 4 ...

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... Si7401DN Vishay Siliconix TYPICAL CHARACTERISTICS T 0 0.3 0.2 0.1 0.0 - 0 – Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 –4 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...

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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...