si7402dn Vishay, si7402dn Datasheet

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si7402dn

Manufacturer Part Number
si7402dn
Description
N-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7402dn-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72646
S-32522—Rev. A, 08-Dec-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
12
(V)
J
8
ti
3.30 mm
D
Ordering Information: Si7402DN-T1
t A bi
7
D
6
D
J
J
a
a
0.0057 @ V
0.0067 @ V
0.0085 @ V
PowerPAK 1212-8
= 150_C)
= 150_C)
t
Bottom View
a
a
5
Parameter
Parameter
D
r
DS(on)
a
a
1
GS
GS
GS
S
(W)
N-Channel 12-V (D-S) MOSFET
= 4.5 V
= 2.5 V
= 1.8 V
2
S
a
3
S
3.30 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
18.8
16.5
20
(A)
Symbol
Symbol
T
R
R
R
V
J
V
I
P
P
DM
, T
thJC
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
APPLICATIONS
D PA Switch, Load Switch and Battery Switch
D Point-of-Load for 5-V or 3.3-V BUS Stepdown
G
Package with Low 1.07-mm Profile
for Portable Devices
10 secs
Typical
N-Channel MOSFET
3.2
3.8
2.4
1.9
20
16
24
65
D
S
ï55 to 150
"8
12
50
Steady State
Maximum
Vishay Siliconix
1.3
1.5
1.0
2.4
13
10
33
81
Si7402DN
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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si7402dn Summary of contents

Page 1

... PowerPAK 1212 Bottom View Ordering Information: Si7402DN-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction ...

Page 2

... Si7402DN Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... V ï Source-to-Drain Voltage (V) SD Document Number: 72646 S-32522—Rev. A, 08-Dec-03 New Product 25_C J 0.8 1.0 1.2 Si7402DN Vishay Siliconix Capacitance 4000 C 3500 iss 3000 2500 2000 1500 C oss 1000 C rss 500 ï Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si7402DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.3 0 250 mA D 0.1 ï0.0 ï0.1 ï0.2 ï0.3 ï0.4 ï0.5 ï50 ï ï Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ï4 ï www.vishay.com 4 New Product ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ï4 10 Document Number: 72646 S-32522—Rev. A, 08-Dec-03 New Product Normalized Thermal Transient Impedance, Junction-to-Case ï3 ï Square Wave Pulse Duration (sec) Si7402DN Vishay Siliconix ï www.vishay.com 5 ...

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