si7402dn Vishay, si7402dn Datasheet - Page 2

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si7402dn

Manufacturer Part Number
si7402dn
Description
N-channel 12-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7402dn-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7402DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
V
ï Drain-to-Source Voltage (V)
a
GS
= 5 thru 2 V
2
a
3
Symbol
J
V
r
I
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
= 25_C UNLESS OTHERWISE NOTED)
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
1.5 V
1 V
5
New Product
V
V
I
D
DS
DS
^ 1 A, V
I
F
= 12 V, V
V
= 6 V, V
V
V
V
V
V
V
= 2.3 A, di/dt = 100 A/ms
DS
V
I
DS
DS
Test Condition
GS
V
V
S
DS
GS
DS
GS
DD
DD
= 3.2 A, V
w 5 V, V
= V
= 0 V, V
= 4.5 V, I
= 12 V, V
= 10 V, I
= 2.5 V, I
= 1.8 V, I
= 6 V, R
= 6 V, R
GEN
GS
GS
GS
, I
= 4.5 V, I
= 4.5 V, R
= 0 V, T
GS
D
GS
D
GS
GS
D
L
L
= 250 mA
D
D
= 20 A
= "8 V
= 6 W
= 6 W
= 18 A
= 4.5 V
= 20 A
= 1 A
= 0 V
= 0 V
J
D
g
= 55_C
50
40
30
20
10
= 20 A
= 6 W
0
0.00
0.25
V
GS
Transfer Characteristics
0.50
ï Gate-to-Source Voltage (V)
Min
0.45
50
25_C
0.75
T
C
= 125_C
0.0045
0.0053
0.0065
Typ
0.70
100
110
9.5
1.8
36
35
65
60
40
S-32522—Rev. A, 08-Dec-03
4
1.00
Document Number: 72646
1.25
0.0057
0.0067
0.0085
Max
"100
0.85
100
165
1.2
55
55
90
80
1
5
ï55_C
1.50
Unit
nC
nA
mA
mA
ns
W
W
V
A
S
V
1.75

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