ssm6j402tu TOSHIBA Semiconductor CORPORATION, ssm6j402tu Datasheet

no-image

ssm6j402tu

Manufacturer Part Number
ssm6j402tu
Description
Toshiba Field-effect Transistor Silicon P-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSM6J402TU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
ssm6j402tu(TE85L,F)
Manufacturer:
SIPEX
Quantity:
134
○ DC/DC Converter Application
○ High-Speed Switching Applications
Absolute Maximum Ratings (Ta = 25˚C)
Electrical Characteristics
4.0 V drive
Low ON-resistance : R
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
Note 1: Mounted on an FR4 board
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Drain–source forward voltage
Note 2: Pulse test
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
Characteristic
Characteristic
Turn-on time
Turn-off time
: R
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
DS(ON)
DS(ON)
Pulse
DC
= 225mΩ max (@V
= 117mΩ max (@V
(Ta = 25°C)
SSM6J402TU
P
Symbol
V
V
D
V
V
T
R
I
T
DSS
GSS
(注 1)
Symbol
I
DP
stg
(BR) DSS
(BR) DSX
D
ch
DS (ON)
V
I
I
C
|Y
C
C
DSS
GSS
V
Q
Q
t
t
Q
DSF
on
off
oss
rss
iss
th
fs
gs
gd
g
|
GS
GS
I
I
V
V
V
V
I
I
V
V
V
V
V
I
2
D
D
D
D
D
−55~150
)
DS
GS
DS
DS
DS
DS
GS
DD
GS
= −4 V)
Rating
= −10 V)
= −1 mA, V
= −1 mA, V
= −1 A, V
= −0.5 A, V
= 2 A, V
−2.0
−4.0
−30
±20
500
150
1
= −30 V, V
= −5 V, I
= −5 V, I
= −15 V, V
= −15V, I
= ±16 V, V
= −10 V
= −15 V, I
= 0~−4 V, R
Test Condition
GS
GS
D
D
GS
GS
GS
D
= 0 V
D
= −1 mA
= −1 A
GS
= −10 V
GS
DS
= −2.0 A
= −1 A
G
= 0 V
= 20 V
= −4 V
Unit
mW
°C
°C
V
V
A
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 Ω
(Note2)
(Note2)
(Note2)
(Note2)
Weight: 7.0 mg (typ.)
JEDEC
JEITA
TOSHIBA
UF6
−1.2
Min
−30
−15
1.6
1
2
3
Typ.
SSM6J402TU
160
280
3.1
5.3
4.1
1.2
0.8
80
80
45
16
35
1, 2, 5, 6 : Drain
3
4
2.1±0.1
1.7±0.1
2-2T1D
2007-09-12
: Gate
: Source
Max
−2.6
117
225
1.2
−1
±1
unit: mm
6
5
4
Unit
nC
μA
μA
pF
ns
V
V
S
V

Related parts for ssm6j402tu

ssm6j402tu Summary of contents

Page 1

... − − 0~− off = DSF SSM6J402TU 2.1±0.1 1.7±0 Drain 3 : Gate UF6 4 : Source JEDEC ― JEITA ― TOSHIBA 2-2T1D Weight: 7.0 mg (typ.) Min Typ. Max − ...

Page 2

... Common Source ( 25°C OUT Equivalent Circuit requires a higher voltage than V GS (on) GS (off) 2 SSM6J402TU 0 V 10% 90% − (ON) 90% 10 off (top view for D and V requires a lower ...

Page 3

... Ta = 100 °C -0.01 -0.001 -0.0001 -1 0 -0.5 -1.0 Gate–source voltage V 500 400 300 200 VGS = -4.0V 100 0 - -2.0 -1.5 -1.0 -0.5 0 −50 150 Ambient temperature Ta (°C) 3 SSM6J402TU I – °C −25 °C -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 ( – (ON) D Common Source Ta = 25°C -10V - Drain current I (A) ...

Page 4

... Drain–source voltage V 600 t off t f 100 C iss C oss rss -100 0.01 ( SSM6J402TU I – °C −25 °C 0.4 0.6 0.8 1.0 1.2 ( – Common Source - ∼ ° Ω ...

Page 5

... Cu Pad : 645 mm2) 100 10 1 0.001 0.01 0 Pulse width t (s) w 1000 800 600 DC 400 200 0 -40 -20 100 1000 Ambient temperature Ta (°C) 5 SSM6J402TU P – Mounted on FR4 board (25.4mm × 25.4mm × 1. Pad : 645 mm2 100 140 160 120 2007-09-12 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6J402TU 20070701-EN 2007-09-12 ...

Related keywords