ssm6p35fe TOSHIBA Semiconductor CORPORATION, ssm6p35fe Datasheet
ssm6p35fe
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ssm6p35fe Summary of contents
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... D T 150 ch −55 to 150 T stg and the significant change 2 × 6) Equivalent Circuit (top view SSM6P35FE 1.6±0.05 1.2±0. Unit V 1.Source1 4.Source2 V ES6 2.Gate1 3.Drain2 mA JEDEC mW °C JEITA °C TOSHIBA 2-2N1D Weight: 3.0 mg (typ.) in 2008-03-14 Unit ...
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... Ta = 25°C Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM6P35FE). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...
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... Gate–source voltage Ta=100℃ -25℃ -10 -2 (V) Gate–source voltage V 20 Common Source -1000 −50 Ambient temperature Ta (°C) 3 SSM6P35FE I – −25° (V) GS – (ON) GS Common Source -50 mA 25℃ Ta=100℃ -25℃ -10 ...
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... Drain–source voltage V 250 Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm 200 150 100 50 0 -1000 *:Total Rating Ambient temperature Ta (°C) 4 SSM6P35FE ⎪Y ⎪ – Common Source 25°C -10 -100 -1000 (mA – iss C oss ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6P35FE 20070701-EN GENERAL 2008-03-14 ...