ssm3k127tu TOSHIBA Semiconductor CORPORATION, ssm3k127tu Datasheet

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... Unit DSS ± GSS (Note 1) 800 (Note 2) 500 D °C T 150 ch −55 to 150 °C T stg SSM3K127TU Unit: mm 2.1±0.1 1.7±0 Gate 2. Souce 3. Drain UFM JEDEC ― JEITA ― 2-2U1A TOSHIBA Weight: 6.6mg (typ.) 2007-11-13 ...

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... 1 2 4.7 Ω off = -2 DSF SSM3K127TU Min Typ. Max Unit ⎯ ⎯ ⎯ ⎯ 18 ⎯ ⎯ μA 1 ⎯ ⎯ ±1 μA ⎯ 0.4 1.0 V ⎯ (Note3) 2.1 4.2 S ⎯ ...

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... Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM3K127TU). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...

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... Gate–source voltage V 400 Common Source Ta = 25°C 300 200 1.8 V 2.5 V 100 VGS = 4.0V − 25 ° 1.0 0.5 0 −50 150 Ambient temperature Ta (°C) 4 SSM3K127TU I – °C − 25 °C 1.0 2.0 ( – (ON Drain current I ( – Ta ...

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... Ta =100 °C 0.01 0.001 10 0 Drain–source voltage V 1000 t off iss 100 C oss C rss 100 0.01 ( SSM3K127TU I – Common Source −25 °C S –0.5 –1.0 –1.5 ( – Common Source ∼ 2 ° ...

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... Mounted on ceramic board (25.4mm × 25.4mm × 0. Pad : 645 mm b: Mounted on FR4 board (25.4mm × 25.4mm × 1. Pad : 645 mm 800 a 600 b 400 2 200 ) ×3) 0 100 600 -40 -20 Ambient temperature Ta (°C) 6 SSM3K127TU P – 100 120 140 160 2007-11-13 ...

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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 SSM3K127TU 20070701-EN 2007-11-13 ...