ssm3k35fs TOSHIBA Semiconductor CORPORATION, ssm3k35fs Datasheet

ssm3k35fs

Manufacturer Part Number

ssm3k35fs

Description

Toshiba Field-effect Transistor Silicon N-channel Mos Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.SSM3K35FS.pdf (5 pages)

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○ High-Speed Switching Applications

○ Analog Switch Applications

•

Absolute Maximum Ratings (Ta = 25˚C)

Electrical Characteristics

Note: Using continuously under heavy loads (e.g. the application of high

Note 1: Pulse test

1.2-V drive

Low ON-resistance: R

Drain–source voltage

Gate–source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature

Gate leakage current

Drain–source breakdown voltage

Drain cutoff current

Gate threshold voltage

Forward transfer admittance

Drain–source ON-resistance

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time

Drain–source forward voltage

temperature/current/voltage

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

Turn-on time

Turn-off time

: R

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

= 20 Ω (max) (@V

= 8 Ω (max) (@V

= 4 Ω (max) (@V

= 3 Ω (max) (@V

Pulse

(Ta = 25°C)

and

SSM3K35FS

Symbol

(BR) DSS

DS (ON)

⏐Y

GSS

DSS

GSS

DSS

DSF

the

oss

off

stg

rss

iss

⏐

= 1.5 V)

= 2.5 V)

= 4.0 V)

= 1.2 V)

significant

−55 to 150

= 0.1 mA, V

= 50 mA, V

= 5 mA, V

= - 180 mA, V

Rating

= 20 V, V

= 3 V, I

= 3 V, V

= ±10 V, V

= 3 V, I

= 0 to 2.5 V

±10

180

360

100

150

Test Condition

change

= 1 mA

= 50 mA

= 50 mA,

= 1.5 V

= 1.2 V

= 0V, f = 1 MHz

= 4 V

= 2.5 V

= 0V

Unit

°C

(Note 1)

Weight: 2.4 mg (typ.)

JEDEC

JEITA

TOSHIBA

Min

115

0.4

⎯

Typ.

-0.9

115

300

1.5

9.5

4.1

9.5

⎯

SSM3K35FS

2-2H1B

2008-03-10

Max

±10

-1.2

1.0

⎯

Unit: mm

Unit

μA

Related parts for ssm3k35fs

ssm3k35fs Summary of contents

Page 1

... MHz rss C oss mA 2 off = - 180 mA DSF SSM3K35FS JEDEC - JEITA - in TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) Min Typ. Max ⎯ ⎯ ±10 ⎯ ⎯ 20 ⎯ ⎯ 1 ⎯ 0.4 1.0 ⎯ ⎯ (Note 1) 115 ⎯ ...

... Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM3K35FS). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity ...

Page 3

... Gate–source voltage V 10 Common Source −50 1000 Ambient temperature Ta (°C) 3 SSM3K35FS I – −25° ( – (ON) GS Common Source 25° 100°C − ...

Page 4

... MHz Ta = 25°C 1 0.1 −1.5 (V) Drain–source voltage V 250 200 150 100 1000 Ambient temperature Ta (°C) 4 SSM3K35FS ⎪Y ⎪ – Common Source 25°C 10 100 1000 Drain current I (mA – iss C oss C rss ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K35FS 20070701-EN GENERAL 2008-03-10 ...

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ssm3k35fs TOSHIBA Semiconductor CORPORATION, ssm3k35fs Datasheet

ssm3k35fs

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ssm3k35fs Summary of contents

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